Power Electronics Maximum di / dt in a SCR is inversely proportional to L in the circuit. inversely proportional to Vm of supply voltage. directly proportional to Vm of supply voltage. both A and C. inversely proportional to L in the circuit. inversely proportional to Vm of supply voltage. directly proportional to Vm of supply voltage. both A and C. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A modern power semiconductor device that combines the characteristic of BJT and MOSFET is IGBT. GTO. FCT. MCT. IGBT. GTO. FCT. MCT. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Thyristor is nothing but a Amplifier with higher gain. Controlled transistor. Controlled switch. Amplifier with large current gain. Amplifier with higher gain. Controlled transistor. Controlled switch. Amplifier with large current gain. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Which following is a two terminal three layer device? None of above. MOSFET. BJT. Power dioed. None of above. MOSFET. BJT. Power dioed. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics An SCR has half cycle surge current rating of 3000 A for 50 Hz supply. One cycle surge current will be 4242.64 A. 1500 A. 6000 A. 2121.32 A. 4242.64 A. 1500 A. 6000 A. 2121.32 A. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics When the temperature increases, the inter-base resistance (RBB) of a UJT ___________. Increases Decreases Remains the same None of these Increases Decreases Remains the same None of these ANSWER DOWNLOAD EXAMIANS APP
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