Power Electronics To meet high current demand we use SCRs in both B and C. parallel connection. series connection. anti parallel connection. both B and C. parallel connection. series connection. anti parallel connection. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A modern power semiconductor device that combines the characteristic of BJT and MOSFET is IGBT. FCT. GTO. MCT. IGBT. FCT. GTO. MCT. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics 60 thyrsistors are connected in series and parallel to form a 10 KV and 5.5 KA switch. Each thyristor is rated for 1.2 KV, 1 KA. The no. of parallel path are 6. The efficiency of the switch is 83.3 %. 76.3 %. 91.6 %. 90.9 %. 83.3 %. 76.3 %. 91.6 %. 90.9 %. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics SITH is also known as None of these. Filled controlled diode. Filled controlled rectifier. Silicon controlled rectifier. None of these. Filled controlled diode. Filled controlled rectifier. Silicon controlled rectifier. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Maximum di / dt in a SCR is both A and C. inversely proportional to Vm of supply voltage. inversely proportional to L in the circuit. directly proportional to Vm of supply voltage. both A and C. inversely proportional to Vm of supply voltage. inversely proportional to L in the circuit. directly proportional to Vm of supply voltage. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A diac has ___________ terminals. Four Two Three None of these Four Two Three None of these ANSWER DOWNLOAD EXAMIANS APP
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