Power Electronics Which of following is not a power transistor? IGBTs. TRIAC. COOLMOS. SITS. IGBTs. TRIAC. COOLMOS. SITS. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics What happen due to high di / dt? None of these. Breakdown of junction. Local hot spot. Insulation failure. None of these. Breakdown of junction. Local hot spot. Insulation failure. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics IGBT combines the advantages of BJTs and MOSFETs. BJTs and SITs. None of these. SITs and MOSFETs. BJTs and MOSFETs. BJTs and SITs. None of these. SITs and MOSFETs. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics The V-I characteristics for a triac in the first and third quadrants are essentially identical to those of ___________ in its first quadrant Transistor None of these SCR UJT Transistor None of these SCR UJT ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Which of following devices has highest di/dt and dv/dt capability? SITH. SCR. SIT. GTO. SITH. SCR. SIT. GTO. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Latching current for an SCR inserted between a dc voltage source of 200 V and load is 100 mA. Compute the minimum rate of width pulse required to turn ON the SCR in case load consists of R = 20 Ω in series with L = 0.2 H. 300 µs. 100 µs. 150 µs. 200 µs. 300 µs. 100 µs. 150 µs. 200 µs. ANSWER DOWNLOAD EXAMIANS APP
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