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Power Electronics

Power Electronics
Which of following is not a power transistor?

 IGBTs.
 SITS.
 COOLMOS.
  TRIAC.

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Power Electronics
When the temperature increases, the inter-base resistance (RBB) of a UJT ___________.

Decreases
None of these
Increases
Remains the same

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Power Electronics
In a P1N1P2N2 thyristor which layer is less doped ?

 N2.
 P2.
  N1.
 P1.

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Power Electronics
When a UJT is turned ON, the resistance between emitter terminal and lower base terminal ___________

Remains the same
Is decreased
Is increased
None of these

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Power Electronics
Dynamic equalising circuit is useful

  both B and C.
 to limit dV / dt of SCR.
 to limit di / dt of SCR.
 for voltage equalisation.

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Power Electronics
For an SCR gate cathode characteristic is a straight line of 130. For triggered source volume of 15 V and allowable gate power dissipation of 0.5 W compute the gate source resistance?

 11.19 ohm
  111.9 ohm
 108 ohm
 115 ohm

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