Power Electronics What happen due to high di / dt? Local hot spot. Breakdown of junction. None of these. Insulation failure. Local hot spot. Breakdown of junction. None of these. Insulation failure. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Which one is most suitable power device for high frequency (>100 KHz) switching application? Power MOSFET. Microwave transistor. BJT. Schottky diode. Power MOSFET. Microwave transistor. BJT. Schottky diode. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics To turn on UJT, the forward bias on the emitter diode should be ___________ the peak point voltage. More than Equal to Less than None of these More than Equal to Less than None of these ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Delay time is defined by the interval when anode current reaches 10 % from forward leakage current. anode voltage drops from 100 % to 90 % of its actual value. all of these. gate current increases from 90 % to 100 % of its final value. anode current reaches 10 % from forward leakage current. anode voltage drops from 100 % to 90 % of its actual value. all of these. gate current increases from 90 % to 100 % of its final value. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Which following is a two terminal three layer device? MOSFET. BJT. None of above. Power dioed. MOSFET. BJT. None of above. Power dioed. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics During gate recovery time charge carriers of J3 junction is removed. charge carriers of J2 junction is swept out. charge carrier of J1 junction removed. charge carriers of J2 junction recombined. charge carriers of J3 junction is removed. charge carriers of J2 junction is swept out. charge carrier of J1 junction removed. charge carriers of J2 junction recombined. ANSWER DOWNLOAD EXAMIANS APP
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