Power Electronics A UJT has ___________. One pn junction Two pn junctions None of these Three pn junctions One pn junction Two pn junctions None of these Three pn junctions ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A power semiconductor may undergo damage due to High dv/dt. High di/dt. Low di/dt. Low dv/dt. High dv/dt. High di/dt. Low di/dt. Low dv/dt. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A thyristor will be triggered when Vg = 1.5 volt and Ig = 100 mA in the given figure. Calculate the value of R in ohm is 60. 3.714. 37.14. 65. 60. 3.714. 37.14. 65. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics In a UJT, the p-type emitter is ___________ doped Lightly Moderately Heavily None of these Lightly Moderately Heavily None of these ANSWER DOWNLOAD EXAMIANS APP
Power Electronics 4 thyristors rated 200 V in series. The operating voltage of the string is 0.600 V. Derating factor of the string is 0.75. 0.25. 0.7. 0.2. 0.75. 0.25. 0.7. 0.2. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics For an SCR gate cathode characteristic is a straight line of 130. For triggered source volume of 15 V and allowable gate power dissipation of 0.5 W compute the gate source resistance? 111.9 ohm 115 ohm 108 ohm 11.19 ohm 111.9 ohm 115 ohm 108 ohm 11.19 ohm ANSWER DOWNLOAD EXAMIANS APP