Power Electronics To turn on UJT, the forward bias on the emitter diode should be ___________ the peak point voltage. More than Equal to Less than None of these More than Equal to Less than None of these ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Which triggering is the most reliable? Forward voltage triggering. dV / dt triggering. Thermal triggering. Gate triggering. Forward voltage triggering. dV / dt triggering. Thermal triggering. Gate triggering. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A modern power semiconductor device that combines the characteristic of BJT and MOSFET is GTO. IGBT. MCT. FCT. GTO. IGBT. MCT. FCT. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics For an SCR gate cathode characteristic is a straight line of 130. For triggered source volume of 15 V and allowable gate power dissipation of 0.5 W compute the gate source resistance? 115 ohm 111.9 ohm 11.19 ohm 108 ohm 115 ohm 111.9 ohm 11.19 ohm 108 ohm ANSWER DOWNLOAD EXAMIANS APP
Power Electronics The device that exhibits negative resistance region is ___________. Transistor Triac UJT Diac Transistor Triac UJT Diac ANSWER DOWNLOAD EXAMIANS APP
Power Electronics What may happen high dV / dt? Both A and B. Unwanted turn ON. Breakdown of J2 junction. Anyone of these. Both A and B. Unwanted turn ON. Breakdown of J2 junction. Anyone of these. ANSWER DOWNLOAD EXAMIANS APP
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