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Power Electronics

Power Electronics
To turn on UJT, the forward bias on the emitter diode should be ___________ the peak point voltage.

Equal to
None of these
Less than
More than

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Power Electronics
A modern power semiconductor device that combines the characteristic of BJT and MOSFET is

 FCT.
 GTO.
  IGBT.
 MCT.

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Power Electronics
Which of following devices has highest di/dt and dv/dt capability?

  GTO.
 SIT.
 SITH.
 SCR.

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Power Electronics
Which statement is true for latching current ?

 It is related to conduction process of device.
 Both C and D.
 It is related to turn off process of the device.
  It is related to turn on process of the device.

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Power Electronics
A single phase full bridge inverter can operate in load commutation mode in case load consists of

  RLC underdamped.
 RL.
 RLC overdamped.
 RLC critically damped.

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Power Electronics
Which one is most suitable power device for high frequency (>100 KHz) switching application?

 BJT.
  Power MOSFET.
 Schottky diode.
 Microwave transistor.

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