Power Electronics To turn on UJT, the forward bias on the emitter diode should be ___________ the peak point voltage. Equal to None of these Less than More than Equal to None of these Less than More than ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A modern power semiconductor device that combines the characteristic of BJT and MOSFET is FCT. GTO. IGBT. MCT. FCT. GTO. IGBT. MCT. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Which of following devices has highest di/dt and dv/dt capability? GTO. SIT. SITH. SCR. GTO. SIT. SITH. SCR. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Which statement is true for latching current ? It is related to conduction process of device. Both C and D. It is related to turn off process of the device. It is related to turn on process of the device. It is related to conduction process of device. Both C and D. It is related to turn off process of the device. It is related to turn on process of the device. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A single phase full bridge inverter can operate in load commutation mode in case load consists of RLC underdamped. RL. RLC overdamped. RLC critically damped. RLC underdamped. RL. RLC overdamped. RLC critically damped. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Which one is most suitable power device for high frequency (>100 KHz) switching application? BJT. Power MOSFET. Schottky diode. Microwave transistor. BJT. Power MOSFET. Schottky diode. Microwave transistor. ANSWER DOWNLOAD EXAMIANS APP
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