Power Electronics Which of the following is used in SCR to protect from high dV / dt? Fuse. Circuit breaker. Equalizing circuit. Snubber circuit. Fuse. Circuit breaker. Equalizing circuit. Snubber circuit. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics When the temperature increases, the inter-base resistance (RBB) of a UJT ___________. None of these Increases Remains the same Decreases None of these Increases Remains the same Decreases ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A thyristor string is made of a no. of SCR connected in series and parallel. The string have volume and current of 11 KV and 4 KA. The voltage and current rating of available SCRs are 1800 V and 1000 A. For a string efficiency of 90 % let the number of SCRs in series and parallel are a and b respectively. Then the value of a and b will be 4, 6. 7, 5. 6, 4. 5, 7. 4, 6. 7, 5. 6, 4. 5, 7. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A power semiconductor may undergo damage due to Low dv/dt. Low di/dt. High dv/dt. High di/dt. Low dv/dt. Low di/dt. High dv/dt. High di/dt. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics The capacitance of reversed bised junction J2 in a thyristor is CJ2 = 20 pF and can be assumed to be independant of the off state voltage. The limiting value of the charging current to turn on the thyristor is 16 mA. What is the critical value of dv/dt? 800 V/µs. 1000 V/µs. 1200 V/µs. 600 V/µs. 800 V/µs. 1000 V/µs. 1200 V/µs. 600 V/µs. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A modern power semiconductor device that combines the characteristic of BJT and MOSFET is GTO. FCT. MCT. IGBT. GTO. FCT. MCT. IGBT. ANSWER DOWNLOAD EXAMIANS APP
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