Power Electronics Maximum power loss occurs during spread time. rise time. delay time. all. spread time. rise time. delay time. all. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A modern power semiconductor device that combines the characteristic of BJT and MOSFET is GTO. IGBT. FCT. MCT. GTO. IGBT. FCT. MCT. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A diac has ___________ terminals. None of these Four Three Two None of these Four Three Two ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Delay time is defined by the interval when anode voltage drops from 100 % to 90 % of its actual value. all of these. anode current reaches 10 % from forward leakage current. gate current increases from 90 % to 100 % of its final value. anode voltage drops from 100 % to 90 % of its actual value. all of these. anode current reaches 10 % from forward leakage current. gate current increases from 90 % to 100 % of its final value. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Which statement is true for latching current ? It is related to turn on process of the device. Both C and D. It is related to conduction process of device. It is related to turn off process of the device. It is related to turn on process of the device. Both C and D. It is related to conduction process of device. It is related to turn off process of the device. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Which of the following is disadvantage of fast recovery diodes? None of these. Recovery is only 5 µs. Doping is carried out. Recovery is only 50 µs. None of these. Recovery is only 5 µs. Doping is carried out. Recovery is only 50 µs. ANSWER DOWNLOAD EXAMIANS APP
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