Power Electronics Which of the following is disadvantage of fast recovery diodes? Recovery is only 5 µs. None of these. Doping is carried out. Recovery is only 50 µs. Recovery is only 5 µs. None of these. Doping is carried out. Recovery is only 50 µs. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Which of the following is not a characteristic of UJT? Negative resistance Bilateral conduction Intrinsic stand off ratio Peak-point voltage Negative resistance Bilateral conduction Intrinsic stand off ratio Peak-point voltage ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A triac is equivalent to two SCRs ___________. In series None of these In inverse-parallel In parallel In series None of these In inverse-parallel In parallel ANSWER DOWNLOAD EXAMIANS APP
Power Electronics In reverse blocking mode of a thyristor junction J1 and J2 is in forward bias and J3 is in reverse bias. junction J1, J3 is in reverse bias and J2 is in forward bias. junction J3 is in forward bias and J1, J2 in reverse bias. junction J2 is in reverse bias and J1, J3 is in forward bias. junction J1 and J2 is in forward bias and J3 is in reverse bias. junction J1, J3 is in reverse bias and J2 is in forward bias. junction J3 is in forward bias and J1, J2 in reverse bias. junction J2 is in reverse bias and J1, J3 is in forward bias. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A diac has ___________ terminals. None of these Two Three Four None of these Two Three Four ANSWER DOWNLOAD EXAMIANS APP
Power Electronics The capacitance of reversed bised junction J2 in a thyristor is CJ2 = 20 pF and can be assumed to be independant of the off state voltage. The limiting value of the charging current to turn on the thyristor is 16 mA. What is the critical value of dv/dt? 800 V/µs. 600 V/µs. 1000 V/µs. 1200 V/µs. 800 V/µs. 600 V/µs. 1000 V/µs. 1200 V/µs. ANSWER DOWNLOAD EXAMIANS APP
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