Power Electronics Which of the following is disadvantage of fast recovery diodes? None of these. Recovery is only 50 µs. Recovery is only 5 µs. Doping is carried out. None of these. Recovery is only 50 µs. Recovery is only 5 µs. Doping is carried out. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A single phase full bridge inverter can operated in load commutation mode in case load consist of RLC overdamped. RL. RLC underdamped. RLC critically damped. RLC overdamped. RL. RLC underdamped. RLC critically damped. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A power semiconductor may undergo damage due to Low di/dt. High di/dt. High dv/dt. Low dv/dt. Low di/dt. High di/dt. High dv/dt. Low dv/dt. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A UJT has ___________. Three pn junctions One pn junction None of these Two pn junctions Three pn junctions One pn junction None of these Two pn junctions ANSWER DOWNLOAD EXAMIANS APP
Power Electronics The reverse recovery time of diode is trr = 3 μs and the rate off all of the diode current is di/dt = 30 A/μs. The storage charge current QRR is 135 μs. 140 μs. 130 μs. 145 μs. 135 μs. 140 μs. 130 μs. 145 μs. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics The capacitance of reversed bised junction J2 in a thyristor is CJ2 = 20 pF and can be assumed to be independant of the off state voltage. The limiting value of the charging current to turn on the thyristor is 16 mA. What is the critical value of dv/dt? 600 V/µs. 1200 V/µs. 1000 V/µs. 800 V/µs. 600 V/µs. 1200 V/µs. 1000 V/µs. 800 V/µs. ANSWER DOWNLOAD EXAMIANS APP
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