Analog Electronics Barrier potential at the temperature (25°C) is 0.7 V, its value at 125°C is 0.9 V. 0.7 V. 0.5 V. 0.3 V. 0.9 V. 0.7 V. 0.5 V. 0.3 V. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics In a MOSFET, the polarity of the inversion layer is the same as that of the majority carries in the source . charge on the gate electrode. majority carries in the substrate. minority carriers in the drain . majority carries in the source . charge on the gate electrode. majority carries in the substrate. minority carriers in the drain . ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics Thermal runaway is not possible in FET because as the temperature of FET increases The mobility decreases The drain current increases The transconductance increases None of these The mobility decreases The drain current increases The transconductance increases None of these ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics The transition capacitance of a reverse biased pn junction having uniform doping on both sides, varies with junction voltage ( VB ) as 1 / VB. ( VB )2. ( VB )- 1 / 2. VB. 1 / VB. ( VB )2. ( VB )- 1 / 2. VB. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics The conduction loss verses device current characteristics of power MOSFET in best approximately by a parabola. an exponentially decaying function. a straight line. a rectangular hyperbola. a parabola. an exponentially decaying function. a straight line. a rectangular hyperbola. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics For a transistor amplifier with self- biasing network, the following components are used: R1 = 4 KΩ, R2 = 4 KΩ and RE = 1 KΩ, the approximate value of stability factor will be 3. 2. 1.5. 4. 3. 2. 1.5. 4. ANSWER DOWNLOAD EXAMIANS APP
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