Analog Electronics Reverse recovery current in a diode depends upon Temperature. PIV. Forward field current. Storage change. Temperature. PIV. Forward field current. Storage change. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics In CE configuration, the input V-I characteristics are drawn by taking VBE versus IE for constant value of VCE. VCE versus IC for constant value of IE. VBE versus IB for constant value of IC. VBE versus IB for constant value of VCE. VBE versus IE for constant value of VCE. VCE versus IC for constant value of IE. VBE versus IB for constant value of IC. VBE versus IB for constant value of VCE. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics Which is the third region where no charge carriers are present when n-type and p-type are attached together ? Depletion region None of these Forward region Reversed region Depletion region None of these Forward region Reversed region ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics The number of orbiting electrons in germanium atom are : 36 28 32 42 36 28 32 42 ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics In a JFET, the primary control on drain electric current is exerted by gate reverse bias. channel resistance. size of depletion regions. voltage drop across channel. gate reverse bias. channel resistance. size of depletion regions. voltage drop across channel. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics The early effect in a bipolar junction transistor is caused by Large collector-base reverse bias Fast turn-off Large emitter-base forward bias Fast turn-on Large collector-base reverse bias Fast turn-off Large emitter-base forward bias Fast turn-on ANSWER DOWNLOAD EXAMIANS APP
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