Analog Electronics Which of following is the point of reference JFET? None of above. Gate. Source. Drain. None of above. Gate. Source. Drain. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics Energy gap of semiconductor is approx > 8 eV . 5 - 8 eV. 1 eV. 0 eV. > 8 eV . 5 - 8 eV. 1 eV. 0 eV. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics In modern the MOSFET, the material used for the gate is high - purity silica. heavily doped poly crystalline silicon. epitaxially grown silicon. high - purity silicon. high - purity silica. heavily doped poly crystalline silicon. epitaxially grown silicon. high - purity silicon. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics Thermal runaway is not possible in FET because as the temperature of FET increases The transconductance increases The mobility decreases None of these The drain current increases The transconductance increases The mobility decreases None of these The drain current increases ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics Energy gap of conductor is 8 eV. 5 - 8 eV. 1 - 2 eV. 0 eV. 8 eV. 5 - 8 eV. 1 - 2 eV. 0 eV. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics What is the condition if no external potential energy is applied to the PN junction then diode ? None of these Forward biased Reversed biased Zero Bias None of these Forward biased Reversed biased Zero Bias ANSWER DOWNLOAD EXAMIANS APP