Analog Electronics What will be the Potential barrier for Ge Diode ? 0.03V 0.5V 0.3V 0.7V 0.03V 0.5V 0.3V 0.7V ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics Thermal runaway is not possible in FET because as the temperature of FET increases The mobility decreases The drain current increases The transconductance increases None of these The mobility decreases The drain current increases The transconductance increases None of these ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics When P-type substance is connected with positive and N-type is connected with negative terminal then P-N junction diode is in .................... No biased None of these Reverse biased Forward biased No biased None of these Reverse biased Forward biased ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics Under normal reverse bias voltage applied to diode, the reverse electric current in Si diode order of micro A. none of them. 1000 micro A. 100 mA. order of micro A. none of them. 1000 micro A. 100 mA. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics The number of valence electrons in silicon atom are : 1 3 2 4 1 3 2 4 ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics When VGS = 0 V, a JFET is an analog device. cut off. saturated. an open switch. an analog device. cut off. saturated. an open switch. ANSWER DOWNLOAD EXAMIANS APP
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