Power Electronics Which of the following is not a characteristic of UJT? Bilateral conduction Intrinsic stand off ratio Negative resistance Peak-point voltage Bilateral conduction Intrinsic stand off ratio Negative resistance Peak-point voltage ANSWER DOWNLOAD EXAMIANS APP
Power Electronics The maximum di/dt in a SCR is Directly proportional to inductance in the circuit. Directly proportional to supply voltage. Both A and B. Inversely proportional to supply voltage. Directly proportional to inductance in the circuit. Directly proportional to supply voltage. Both A and B. Inversely proportional to supply voltage. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics During reverse recovery time charge carrier of junction J3 is swept out. charge carrier of junction J2 recombined. charge carrier of junction J1 is swept out. both B and C. charge carrier of junction J3 is swept out. charge carrier of junction J2 recombined. charge carrier of junction J1 is swept out. both B and C. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A modern power semiconductor device that combines the characteristic of BJT and MOSFET is FCT. IGBT. MCT. GTO. FCT. IGBT. MCT. GTO. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics If a latching current for the circuit shown in figure is 2 mA. Obtain the value of minimum width of the property turn ON the SCR? 3.3 µs 3.1 µs 3.2 µs 3 µs. 3.3 µs 3.1 µs 3.2 µs 3 µs. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics When the temperature increases, the intrinsic stand off ratio ___________. Essentially remains the same Increases Decreases None of these Essentially remains the same Increases Decreases None of these ANSWER DOWNLOAD EXAMIANS APP
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