Power Electronics Which of the following is not a characteristic of UJT? Peak-point voltage Intrinsic stand off ratio Negative resistance Bilateral conduction Peak-point voltage Intrinsic stand off ratio Negative resistance Bilateral conduction ANSWER DOWNLOAD EXAMIANS APP
Power Electronics The typical time of rising time lies between 10 - 20 µs. 1 - 4 µs. 90 - 100 µs. 40 - 60 µs. 10 - 20 µs. 1 - 4 µs. 90 - 100 µs. 40 - 60 µs. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A modern power semiconductor device that combines the characteristic of BJT and MOSFET is MCT. IGBT. GTO. FCT. MCT. IGBT. GTO. FCT. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics What may happen high dV / dt? Unwanted turn ON. Breakdown of J2 junction. Both A and B. Anyone of these. Unwanted turn ON. Breakdown of J2 junction. Both A and B. Anyone of these. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Power transistor are type of BJTs. MOSFETs. All of above. IGBTs. BJTs. MOSFETs. All of above. IGBTs. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics The capacitance of reversed bised junction J2 in a thyristor is CJ2 = 20 pF and can be assumed to be independant of the off state voltage. The limiting value of the charging current to turn on the thyristor is 16 mA. What is the critical value of dv/dt? 600 V/µs. 1000 V/µs. 800 V/µs. 1200 V/µs. 600 V/µs. 1000 V/µs. 800 V/µs. 1200 V/µs. ANSWER DOWNLOAD EXAMIANS APP
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