Power Electronics When the temperature increases, the inter-base resistance (RBB) of a UJT ___________. Increases None of these Decreases Remains the same Increases None of these Decreases Remains the same ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Which of following devices has highest di/dt and dv/dt capability? GTO. SCR. SITH. SIT. GTO. SCR. SITH. SIT. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics When the emitter terminal of a UJT is open, the resistance between the base terminal is generally ___________. High Low Extremely low None of these High Low Extremely low None of these ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A thyristor string is made of a no. of SCR connected in series and parallel. The string have volume and current of 11 KV and 4 KA. The voltage and current rating of available SCRs are 1800 V and 1000 A. For a string efficiency of 90 % let the number of SCRs in series and parallel are a and b respectively. Then the value of a and b will be 5, 7. 4, 6. 7, 5. 6, 4. 5, 7. 4, 6. 7, 5. 6, 4. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics ON state voltage drop across SCR lie between the range 0.5 - 1 V. 0 - 0.5 V. 1 - 1.5 V. 1.5 - 2 V. 0.5 - 1 V. 0 - 0.5 V. 1 - 1.5 V. 1.5 - 2 V. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Under over voltage condition impedance offered by the voltage clamping device is moderate. low. high. infinity. moderate. low. high. infinity. ANSWER DOWNLOAD EXAMIANS APP
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