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Power Electronics

Power Electronics
When the temperature increases, the inter-base resistance (RBB) of a UJT ___________.

None of these
Increases
Remains the same
Decreases

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Power Electronics
The V-I characteristics for a triac in the first and third quadrants are essentially identical to those of ___________ in its first quadrant

None of these
SCR
Transistor
UJT

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Power Electronics
60 thyrsistors are connected in series and parallel to form a 10 KV and 5.5 KA switch. Each thyristor is rated for 1.2 KV, 1 KA. The no. of parallel path are 6. The efficiency of the switch is

 83.3 %.
 91.6 %.
  76.3 %.
 90.9 %.

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Power Electronics
The reverse recovery time of diode is trr = 3 μs and the rate off all of the diode current is di/dt = 30 A/μs. The storage charge current QRR is

 140 μs.
  135 μs.
 145 μs.
 130 μs.

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Power Electronics
The device that does not have the gate terminal is ___________.

SCR
FET
Diac
Triac

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Power Electronics
Let of a thyristor Vc1, Vc2, Vc3 are forward break over voltage for gate current Ig1, Ig2, Ig3 respectively. Then

  Vc1 > Vc2 > Vc3 when Ig1 < Ig2 < Ig3.
 Vc1 = Vc2 = Vc3 any value of Ig.
 Vc1 > Vc2 > Vc3 when Ig1 > Ig2 > Ig3.
 Vc1 > Vc2 > Vc3 when Ig1= Ig2

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