Power Electronics When the temperature increases, the inter-base resistance (RBB) of a UJT ___________. Remains the same Decreases None of these Increases Remains the same Decreases None of these Increases ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A diac is turned on by ___________. Gate current Gate voltage A breakover voltage None of these Gate current Gate voltage A breakover voltage None of these ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Which one is most suitable power device for high frequency (>100 KHz) switching application? Schottky diode. Power MOSFET. BJT. Microwave transistor. Schottky diode. Power MOSFET. BJT. Microwave transistor. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics SITH is also known as Filled controlled diode. Silicon controlled rectifier. None of these. Filled controlled rectifier. Filled controlled diode. Silicon controlled rectifier. None of these. Filled controlled rectifier. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Rise time is defined by the interval when anode voltage drops from 90 % to 10 % of its initial value. both B and C. gate current rises from 90 % to 100 % of it final value. anode current rises 10 % to 90 % of its final value. anode voltage drops from 90 % to 10 % of its initial value. both B and C. gate current rises from 90 % to 100 % of it final value. anode current rises 10 % to 90 % of its final value. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Which following is a two terminal three layer device? BJT. None of above. MOSFET. Power dioed. BJT. None of above. MOSFET. Power dioed. ANSWER DOWNLOAD EXAMIANS APP
EXAMIANS