Power Electronics When the temperature increases, the inter-base resistance (RBB) of a UJT ___________. None of these Increases Remains the same Decreases None of these Increases Remains the same Decreases ANSWER DOWNLOAD EXAMIANS APP
Power Electronics The V-I characteristics for a triac in the first and third quadrants are essentially identical to those of ___________ in its first quadrant None of these SCR Transistor UJT None of these SCR Transistor UJT ANSWER DOWNLOAD EXAMIANS APP
Power Electronics 60 thyrsistors are connected in series and parallel to form a 10 KV and 5.5 KA switch. Each thyristor is rated for 1.2 KV, 1 KA. The no. of parallel path are 6. The efficiency of the switch is 83.3 %. 91.6 %. 76.3 %. 90.9 %. 83.3 %. 91.6 %. 76.3 %. 90.9 %. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics The reverse recovery time of diode is trr = 3 μs and the rate off all of the diode current is di/dt = 30 A/μs. The storage charge current QRR is 140 μs. 135 μs. 145 μs. 130 μs. 140 μs. 135 μs. 145 μs. 130 μs. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics The device that does not have the gate terminal is ___________. SCR FET Diac Triac SCR FET Diac Triac ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Let of a thyristor Vc1, Vc2, Vc3 are forward break over voltage for gate current Ig1, Ig2, Ig3 respectively. Then Vc1 > Vc2 > Vc3 when Ig1 < Ig2 < Ig3. Vc1 = Vc2 = Vc3 any value of Ig. Vc1 > Vc2 > Vc3 when Ig1 > Ig2 > Ig3. Vc1 > Vc2 > Vc3 when Ig1= Ig2 Vc1 > Vc2 > Vc3 when Ig1 < Ig2 < Ig3. Vc1 = Vc2 = Vc3 any value of Ig. Vc1 > Vc2 > Vc3 when Ig1 > Ig2 > Ig3. Vc1 > Vc2 > Vc3 when Ig1= Ig2 ANSWER DOWNLOAD EXAMIANS APP
EXAMIANS