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Power Electronics

Power Electronics
When the temperature increases, the inter-base resistance (RBB) of a UJT ___________.

Decreases
None of these
Remains the same
Increases

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Power Electronics
BCT is used for

 Low power current control.
 Low power phase control.
 High power current control.
  High power phase control.

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Power Electronics
A GTO can be turned on by applying

 None of these.
 Positive source signal.
  Positive gate signal.
 Positive drain signal.

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Power Electronics
The capacitance of reversed bised junction J2 in a thyristor is CJ2 = 20 pF and can be assumed to be independant of the off state voltage. The limiting value of the charging current to turn on the thyristor is 16 mA. What is the critical value of dv/dt?

 1200 V/µs.
  800 V/µs.
 1000 V/µs.
 600 V/µs.

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Power Electronics
SITH is also known as

 Silicon controlled rectifier.
 Filled controlled rectifier.
 None of these.
  Filled controlled diode.

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Power Electronics
A modern power semiconductor device that combines the characteristic of BJT and MOSFET is

 MCT.
  IGBT.
 GTO.
 FCT.

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