Power Electronics When the temperature increases, the inter-base resistance (RBB) of a UJT ___________. Remains the same Decreases None of these Increases Remains the same Decreases None of these Increases ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A power semiconductor may undergo damage due to High dv/dt. Low di/dt. Low dv/dt. High di/dt. High dv/dt. Low di/dt. Low dv/dt. High di/dt. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Figure shows two thyristors rated 400 A sharing a load current. Current through T2 is 180A. Current through T1 will be 150 A. 100 A. 110 A. 120 A. 150 A. 100 A. 110 A. 120 A. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics In a P1N1P2N2 thyristor which layer is less doped ? P2. P1. N1. N2. P2. P1. N1. N2. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics The latching current of GTO should be of order 2 A. 100 mA. 500 mA. 1 A. 2 A. 100 mA. 500 mA. 1 A. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics After proper turn on of thyristor None of these gate signal should present but can be removed. gate signal must be removed. gate signal is always present. None of these gate signal should present but can be removed. gate signal must be removed. gate signal is always present. ANSWER DOWNLOAD EXAMIANS APP
EXAMIANS