Power Electronics The V-I characteristics for a triac in the first and third quadrants are essentially identical to those of ___________ in its first quadrant Transistor None of these UJT SCR Transistor None of these UJT SCR ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Which one is most suitable power device for high frequency (>100 KHz) switching application? BJT. Schottky diode. Microwave transistor. Power MOSFET. BJT. Schottky diode. Microwave transistor. Power MOSFET. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A triac can pass a portion of ___________ half-cycle through the load. Only positive Only negative Both positive and negative None of these Only positive Only negative Both positive and negative None of these ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Which of the following is not a characteristic of UJT? Bilateral conduction Peak-point voltage Intrinsic stand off ratio Negative resistance Bilateral conduction Peak-point voltage Intrinsic stand off ratio Negative resistance ANSWER DOWNLOAD EXAMIANS APP
Power Electronics When a large surge current of very short duration flows through a thyristor then which one of the following device will operate to protect the thyristor ? Voltage clamping device. CB. Snubber circuit. Fast acting current limiting device (FACL fuse). Voltage clamping device. CB. Snubber circuit. Fast acting current limiting device (FACL fuse). ANSWER DOWNLOAD EXAMIANS APP
Power Electronics When the emitter terminal of a UJT is open, the resistance between the base terminal is generally ___________. None of these High Extremely low Low None of these High Extremely low Low ANSWER DOWNLOAD EXAMIANS APP
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