Electronic Devices and Circuits Forbidden energy gap in germanium at 0 K is about 5 eV 0.78 eV 2 eV 10 eV 5 eV 0.78 eV 2 eV 10 eV ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Assertion (A): A VMOS can handle much larger current than other field effect transistors.Reason (R): In a VMOS the conducting channel is very narrow. Both A and R are true and R is correct explanation of A Both A and R are true but R is not a correct explanation of A A is false but R is true A is true but R is false Both A and R are true and R is correct explanation of A Both A and R are true but R is not a correct explanation of A A is false but R is true A is true but R is false ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In a semiconductor diode, the barrier offers opposition to Majority as well as minority carriers in both regions Holes in P-region only Free electrons in N-region only Majority carriers in both regions Majority as well as minority carriers in both regions Holes in P-region only Free electrons in N-region only Majority carriers in both regions ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits As compared to bipolar junction transistor, a FET Has better thermal stability Has higher input resistance Is less noisy All of these Has better thermal stability Has higher input resistance Is less noisy All of these ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The most commonly used semiconductor material is Mixture of silicon and germanium None of these Silicon Germanium Mixture of silicon and germanium None of these Silicon Germanium ANSWER DOWNLOAD EXAMIANS APP
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