Electronic Devices and Circuits Forbidden energy gap in germanium at 0 K is about 0.78 eV 2 eV 5 eV 10 eV 0.78 eV 2 eV 5 eV 10 eV ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Assertion (A): A VMOS can handle much larger current than other field effect transistors.Reason (R): In a VMOS the conducting channel is very narrow. A is false but R is true Both A and R are true and R is correct explanation of A A is true but R is false Both A and R are true but R is not a correct explanation of A A is false but R is true Both A and R are true and R is correct explanation of A A is true but R is false Both A and R are true but R is not a correct explanation of A ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In a semiconductor diode, the barrier offers opposition to Majority as well as minority carriers in both regions Free electrons in N-region only Holes in P-region only Majority carriers in both regions Majority as well as minority carriers in both regions Free electrons in N-region only Holes in P-region only Majority carriers in both regions ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits As compared to bipolar junction transistor, a FET Is less noisy All of these Has higher input resistance Has better thermal stability Is less noisy All of these Has higher input resistance Has better thermal stability ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The most commonly used semiconductor material is None of these Mixture of silicon and germanium Silicon Germanium None of these Mixture of silicon and germanium Silicon Germanium ANSWER DOWNLOAD EXAMIANS APP
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