Electronic Devices and Circuits Forbidden energy gap in germanium at 0 K is about 0.78 eV 5 eV 10 eV 2 eV 0.78 eV 5 eV 10 eV 2 eV ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Assertion (A): A VMOS can handle much larger current than other field effect transistors.Reason (R): In a VMOS the conducting channel is very narrow. Both A and R are true and R is correct explanation of A A is true but R is false A is false but R is true Both A and R are true but R is not a correct explanation of A Both A and R are true and R is correct explanation of A A is true but R is false A is false but R is true Both A and R are true but R is not a correct explanation of A ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In a semiconductor diode, the barrier offers opposition to Free electrons in N-region only Majority as well as minority carriers in both regions Majority carriers in both regions Holes in P-region only Free electrons in N-region only Majority as well as minority carriers in both regions Majority carriers in both regions Holes in P-region only ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits As compared to bipolar junction transistor, a FET Has higher input resistance All of these Is less noisy Has better thermal stability Has higher input resistance All of these Is less noisy Has better thermal stability ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The most commonly used semiconductor material is None of these Silicon Mixture of silicon and germanium Germanium None of these Silicon Mixture of silicon and germanium Germanium ANSWER DOWNLOAD EXAMIANS APP
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