Electronic Devices and Circuits Forbidden energy gap in germanium at 0 K is about 2 eV 10 eV 0.78 eV 5 eV 2 eV 10 eV 0.78 eV 5 eV ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Assertion (A): A VMOS can handle much larger current than other field effect transistors.Reason (R): In a VMOS the conducting channel is very narrow. A is true but R is false A is false but R is true Both A and R are true and R is correct explanation of A Both A and R are true but R is not a correct explanation of A A is true but R is false A is false but R is true Both A and R are true and R is correct explanation of A Both A and R are true but R is not a correct explanation of A ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In a semiconductor diode, the barrier offers opposition to Majority as well as minority carriers in both regions Majority carriers in both regions Holes in P-region only Free electrons in N-region only Majority as well as minority carriers in both regions Majority carriers in both regions Holes in P-region only Free electrons in N-region only ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits As compared to bipolar junction transistor, a FET Has higher input resistance Is less noisy Has better thermal stability All of these Has higher input resistance Is less noisy Has better thermal stability All of these ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The most commonly used semiconductor material is None of these Silicon Mixture of silicon and germanium Germanium None of these Silicon Mixture of silicon and germanium Germanium ANSWER DOWNLOAD EXAMIANS APP
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