Electronic Devices and Circuits Forbidden energy gap in germanium at 0 K is about 10 eV 0.78 eV 2 eV 5 eV 10 eV 0.78 eV 2 eV 5 eV ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Assertion (A): A VMOS can handle much larger current than other field effect transistors.Reason (R): In a VMOS the conducting channel is very narrow. A is false but R is true Both A and R are true but R is not a correct explanation of A A is true but R is false Both A and R are true and R is correct explanation of A A is false but R is true Both A and R are true but R is not a correct explanation of A A is true but R is false Both A and R are true and R is correct explanation of A ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In a semiconductor diode, the barrier offers opposition to Holes in P-region only Majority as well as minority carriers in both regions Majority carriers in both regions Free electrons in N-region only Holes in P-region only Majority as well as minority carriers in both regions Majority carriers in both regions Free electrons in N-region only ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits As compared to bipolar junction transistor, a FET Has higher input resistance All of these Has better thermal stability Is less noisy Has higher input resistance All of these Has better thermal stability Is less noisy ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The most commonly used semiconductor material is Germanium None of these Mixture of silicon and germanium Silicon Germanium None of these Mixture of silicon and germanium Silicon ANSWER DOWNLOAD EXAMIANS APP
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