Analog Electronics An n- channel JFET has IDSS=2mA,and Vp=-4v.Its transconductance gm=in mA/V)for an applied gate to source voltage VGS=-2v is 0.25 0.5 0.75 1 0.25 0.5 0.75 1 ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics When the Q point moves along the load line, VCE decreases when the collector current decreases. increases. stays the same. None of these decreases. increases. stays the same. None of these ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics Early effect in BJT refers to thermal breakdown. base narrowing. zener breakdown. avalanche breakdown. thermal breakdown. base narrowing. zener breakdown. avalanche breakdown. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics A silicon pn junction in forward condition has a voltage drop closer to 1.7 V. 0.1 V. 0.7 V. 2.1 V. 1.7 V. 0.1 V. 0.7 V. 2.1 V. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics The main factor which makes a MOSFET likely to breakdown during the normal handling high input resistance. high leakage current. very low gate capacitance. both (A) and (C). high input resistance. high leakage current. very low gate capacitance. both (A) and (C). ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics In a N-type semiconductor material electrons are .................... Low charge carriers Minority charge carriers High charge carriers Majority charge carriers Low charge carriers Minority charge carriers High charge carriers Majority charge carriers ANSWER DOWNLOAD EXAMIANS APP
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