Analog Electronics An n- channel JFET has IDSS=2mA,and Vp=-4v.Its transconductance gm=in mA/V)for an applied gate to source voltage VGS=-2v is 1 0.25 0.75 0.5 1 0.25 0.75 0.5 ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics Thermal runaway is not possible in FET because as the temperature of FET increases None of these The transconductance increases The drain current increases The mobility decreases None of these The transconductance increases The drain current increases The mobility decreases ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics The extremely high input impedance of a MOSFET is primarily due to the negative gate-source voltage. extremely small leakage electric current of its gate capacitor. absence of its channel. depletion of electric current carriers. negative gate-source voltage. extremely small leakage electric current of its gate capacitor. absence of its channel. depletion of electric current carriers. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics Most of the electrons in the base of an NPN transistor do not recombine because they have a long lifetime. flow out of the base. have a negative charge. must flow through the base. have a long lifetime. flow out of the base. have a negative charge. must flow through the base. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics The power dissipated by a transistor approximately equals the collector current times collector - emitter voltage. base - emitter voltage. base supply voltage. 0.7 V. collector - emitter voltage. base - emitter voltage. base supply voltage. 0.7 V. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics Silicon and Germanium are ________ elements. tetravalant hexavalant trivalant pentavalant tetravalant hexavalant trivalant pentavalant ANSWER DOWNLOAD EXAMIANS APP
EXAMIANS