Analog Electronics When a reverse bias is applied to gate of JFET the depletion region width is wider near the source and tapers near the drain. is uniform in the channel. is wider near the drain and tapers near source. None of these is wider near the source and tapers near the drain. is uniform in the channel. is wider near the drain and tapers near source. None of these ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics Which are the ways to convert an alternating current into a direct current ? Center-Taped Full-wave rectification. All the above. Half-wave rectification. Bridge Full-wave rectification. Center-Taped Full-wave rectification. All the above. Half-wave rectification. Bridge Full-wave rectification. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics The barrier potential across each silicon depletion layer is 0.3 V. 1 V. 0 V. 0.7 V. 0.3 V. 1 V. 0 V. 0.7 V. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics A silicon pn junction in forward condition has a voltage drop closer to 1.7 V. 2.1 V. 0.1 V. 0.7 V. 1.7 V. 2.1 V. 0.1 V. 0.7 V. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics The magnitude of electric current ICBO depends largely upon emitter-base junction base potential. depends largely upon the emitter doping. is generally greater in silicon than in germanium transistor. increases with the increase in temperature. depends largely upon emitter-base junction base potential. depends largely upon the emitter doping. is generally greater in silicon than in germanium transistor. increases with the increase in temperature. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics When the drain saturation electric current is less than IDSS a JFET acts like a battery. current source. resistor. BJT. battery. current source. resistor. BJT. ANSWER DOWNLOAD EXAMIANS APP
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