Power Electronics A diac has ___________ semiconductor layers Three None of these Four Two Three None of these Four Two ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Let of a thyristor Vc1, Vc2, Vc3 are forward break over voltage for gate current Ig1, Ig2, Ig3 respectively. Then Vc1 = Vc2 = Vc3 any value of Ig. Vc1 > Vc2 > Vc3 when Ig1 < Ig2 < Ig3. Vc1 > Vc2 > Vc3 when Ig1= Ig2 Vc1 > Vc2 > Vc3 when Ig1 > Ig2 > Ig3. Vc1 = Vc2 = Vc3 any value of Ig. Vc1 > Vc2 > Vc3 when Ig1 < Ig2 < Ig3. Vc1 > Vc2 > Vc3 when Ig1= Ig2 Vc1 > Vc2 > Vc3 when Ig1 > Ig2 > Ig3. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics The typical time of rising time lies between 10 - 20 µs. 90 - 100 µs. 40 - 60 µs. 1 - 4 µs. 10 - 20 µs. 90 - 100 µs. 40 - 60 µs. 1 - 4 µs. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics To meet high current demand we use SCRs in anti parallel connection. parallel connection. series connection. both B and C. anti parallel connection. parallel connection. series connection. both B and C. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics For an SCR gate cathode characteristic is a straight line of 130. For triggered source volume of 15 V and allowable gate power dissipation of 0.5 W compute the gate source resistance? 108 ohm 111.9 ohm 115 ohm 11.19 ohm 108 ohm 111.9 ohm 115 ohm 11.19 ohm ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Which semiconductor device acts like a diode and two transistor? Diac. Triac. SCR. UJT. Diac. Triac. SCR. UJT. ANSWER DOWNLOAD EXAMIANS APP
EXAMIANS