Power Electronics Which one is most suitable power device for high frequency (>100 KHz) switching application? Microwave transistor. Power MOSFET. Schottky diode. BJT. Microwave transistor. Power MOSFET. Schottky diode. BJT. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Thermal voltage VT can be given by KT/q. Kq/T. qT/K. (K2/q)(T + 1/T - 1). KT/q. Kq/T. qT/K. (K2/q)(T + 1/T - 1). ANSWER DOWNLOAD EXAMIANS APP
Power Electronics The capacitance of reversed bised junction J2 in a thyristor is CJ2 = 20 pF and can be assumed to be independant of the off state voltage. The limiting value of the charging current to turn on the thyristor is 16 mA. What is the critical value of dv/dt? 600 V/µs. 1000 V/µs. 800 V/µs. 1200 V/µs. 600 V/µs. 1000 V/µs. 800 V/µs. 1200 V/µs. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A diac has ___________ pn junctions Three None of these Two Four Three None of these Two Four ANSWER DOWNLOAD EXAMIANS APP
Power Electronics The reverse recovery time of diode is trr = 3 μs and the rate off all of the diode current is di/dt = 30 A/μs. The storage charge current QRR is 130 μs. 135 μs. 145 μs. 140 μs. 130 μs. 135 μs. 145 μs. 140 μs. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics The typical time of rising time lies between 90 - 100 µs. 10 - 20 µs. 1 - 4 µs. 40 - 60 µs. 90 - 100 µs. 10 - 20 µs. 1 - 4 µs. 40 - 60 µs. ANSWER DOWNLOAD EXAMIANS APP
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