Power Electronics Which one is most suitable power device for high frequency (>100 KHz) switching application? Power MOSFET. Schottky diode. BJT. Microwave transistor. Power MOSFET. Schottky diode. BJT. Microwave transistor. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics The device that exhibits negative resistance region is ___________. Transistor UJT Diac Triac Transistor UJT Diac Triac ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Figure shows two thyristors rated 400 A sharing a load current. Current through T2 is 180A. Current through T1 will be 120 A. 110 A. 150 A. 100 A. 120 A. 110 A. 150 A. 100 A. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A diac has ___________ pn junctions Three Two Four None of these Three Two Four None of these ANSWER DOWNLOAD EXAMIANS APP
Power Electronics To turn on UJT, the forward bias on the emitter diode should be ___________ the peak point voltage. Less than Equal to None of these More than Less than Equal to None of these More than ANSWER DOWNLOAD EXAMIANS APP
Power Electronics 60 thyrsistors are connected in series and parallel to form a 10 KV and 5.5 KA switch. Each thyristor is rated for 1.2 KV, 1 KA. The no. of parallel path are 6. The efficiency of the switch is 90.9 %. 83.3 %. 76.3 %. 91.6 %. 90.9 %. 83.3 %. 76.3 %. 91.6 %. ANSWER DOWNLOAD EXAMIANS APP
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