Power Electronics Which one is most suitable power device for high frequency (>100 KHz) switching application? Schottky diode. BJT. Power MOSFET. Microwave transistor. Schottky diode. BJT. Power MOSFET. Microwave transistor. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Between the peak point and the valley point of UJT emitter characteristics we have ___________ region Saturation None of these Negative resistance Cut-off Saturation None of these Negative resistance Cut-off ANSWER DOWNLOAD EXAMIANS APP
Power Electronics COOLMOS device can be used in application up to power range of 100 KVA. 1 KVA. 500 VA. 2 KVA. 100 KVA. 1 KVA. 500 VA. 2 KVA. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Delay time is defined by the interval when all of these. gate current increases from 90 % to 100 % of its final value. anode voltage drops from 100 % to 90 % of its actual value. anode current reaches 10 % from forward leakage current. all of these. gate current increases from 90 % to 100 % of its final value. anode voltage drops from 100 % to 90 % of its actual value. anode current reaches 10 % from forward leakage current. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A diac has ___________ semiconductor layers None of these Two Four Three None of these Two Four Three ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Figure shows two thyristors rated 400 A sharing a load current. Current through T2 is 180A. Current through T1 will be 150 A. 120 A. 100 A. 110 A. 150 A. 120 A. 100 A. 110 A. ANSWER DOWNLOAD EXAMIANS APP
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