Power Electronics Which one is most suitable power device for high frequency (>100 KHz) switching application? Power MOSFET. BJT. Schottky diode. Microwave transistor. Power MOSFET. BJT. Schottky diode. Microwave transistor. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics The V-I characteristics for a triac in the first and third quadrants are essentially identical to those of ___________ in its first quadrant Transistor SCR UJT None of these Transistor SCR UJT None of these ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A diac is simply ___________. A triac without gate terminal A single junction device None of these A three junction device A triac without gate terminal A single junction device None of these A three junction device ANSWER DOWNLOAD EXAMIANS APP
Power Electronics The device that exhibits negative resistance region is ___________. Triac Diac UJT Transistor Triac Diac UJT Transistor ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A triac has ___________ semiconductor layers. Two Three Four Five Two Three Four Five ANSWER DOWNLOAD EXAMIANS APP
Power Electronics When a large surge current of very short duration flows through a thyristor then which one of the following device will operate to protect the thyristor ? Snubber circuit. CB. Voltage clamping device. Fast acting current limiting device (FACL fuse). Snubber circuit. CB. Voltage clamping device. Fast acting current limiting device (FACL fuse). ANSWER DOWNLOAD EXAMIANS APP
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