Power Electronics Which one is most suitable power device for high frequency (>100 KHz) switching application? Microwave transistor. BJT. Power MOSFET. Schottky diode. Microwave transistor. BJT. Power MOSFET. Schottky diode. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Which statement is true for latching current ? It is related to turn off process of the device. It is related to turn on process of the device. Both C and D. It is related to conduction process of device. It is related to turn off process of the device. It is related to turn on process of the device. Both C and D. It is related to conduction process of device. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics What is used to protect the SCR from over current ? CB and fuse. Snubber circuit. Voltage clamping device. Heat sink. CB and fuse. Snubber circuit. Voltage clamping device. Heat sink. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics IGBT combines the advantages of BJTs and SITs. SITs and MOSFETs. BJTs and MOSFETs. None of these. BJTs and SITs. SITs and MOSFETs. BJTs and MOSFETs. None of these. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Compared to transistor, ______________ have lower on state conduction losses and higher power handling capability MOSFETs. Thyristor. Semi conductor diodes. TRIACs. MOSFETs. Thyristor. Semi conductor diodes. TRIACs. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics The V-I characteristics for a triac in the first and third quadrants are essentially identical to those of ___________ in its first quadrant Transistor None of these SCR UJT Transistor None of these SCR UJT ANSWER DOWNLOAD EXAMIANS APP
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