Power Electronics When the temperature increases, the intrinsic stand off ratio ___________. Essentially remains the same Decreases None of these Increases Essentially remains the same Decreases None of these Increases ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A modern power semiconductor device that combines the characteristic of BJT and MOSFET is GTO. IGBT. FCT. MCT. GTO. IGBT. FCT. MCT. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A 200 A thyristor is to be operated in parallel with a 300 A thyristor. The ON state voltage drops are 1.5 V and 1.2 Volts. What is the value of resistance R to be connected in series with each thyristor, so that current through the combination is 500 A and each of them is fully loaded ? 0.03 ohm 0.3 ohm 0.3 ohm 3.0 ohm 0.03 ohm 0.3 ohm 0.3 ohm 3.0 ohm ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A string of n parallel SCRs is operated at 72 KA, the rating of each SCR is 1 KA. If derating factor of the string is 0.1. Then calculate the value of n 60. 70. 80. 90. 60. 70. 80. 90. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics IGBT combines the advantages of BJTs and MOSFETs. None of these. BJTs and SITs. SITs and MOSFETs. BJTs and MOSFETs. None of these. BJTs and SITs. SITs and MOSFETs. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Between the peak point and the valley point of UJT emitter characteristics we have ___________ region Cut-off None of these Negative resistance Saturation Cut-off None of these Negative resistance Saturation ANSWER DOWNLOAD EXAMIANS APP
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