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Power Electronics

Power Electronics
When the emitter terminal of a UJT is open, the resistance between the base terminal is generally ___________.

Low
Extremely low
None of these
High

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Power Electronics
To meet high current demand we use SCRs in

 both B and C.
  parallel connection.
 anti parallel connection.
 series connection.

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Power Electronics
Which of the following is disadvantage of fast recovery diodes?

 None of these.
 Recovery is only 5 µs.
  Doping is carried out.
 Recovery is only 50 µs.

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Power Electronics
The latching current of GTO should be of order

 2 A.
  500 mA.
 100 mA.
 1 A.

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Power Electronics
Thermal voltage VT can be given by

 KT/q.
 (K2/q)(T + 1/T - 1).
 qT/K.
  Kq/T.

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Power Electronics
Which following is a two terminal three layer device?

 BJT.
  Power dioed.
 MOSFET.
 None of above.

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