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Analog Electronics

Analog Electronics
The number of orbiting electrons in germanium atom are :

 28
 36
 42
 32

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Analog Electronics
Secondary breakdown occures in

  BJT but not is MOSFET.
 Both BJT and MOSFET.
 MOSFET but not in BJT.
 None of these.

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Analog Electronics
The leakage electric current ICBO flows in

  the base and collector leads.
  the emitter and base leads.
  the emitter, base and collector leads.
  the emitter and collector leads.

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Analog Electronics
The value of total collector electric current in a CB circuit is

  IC = αIE - ICO.
  IC = αIE.
  IC = βIE.
  IC = αIE + ICO.

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Analog Electronics
In modern the MOSFET, the material used for the gate is

  epitaxially grown silicon.
  high - purity silica.
  heavily doped poly crystalline silicon.
  high - purity silicon.

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Analog Electronics
When P-type substance is connected with negative and n-type is connected with positive terminal of the battery then P-n junction diode is in ....................

 Forward biased
 No biased
 Reverse biased
None of these

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