Analog Electronics Most of the electrons in the base of an NPN transistor flow out of the base lead. into the emitter. into the base supply. into the collector. out of the base lead. into the emitter. into the base supply. into the collector. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics Which of following is the fastest switching device ? BJT. MOSFET. JFET. Triode. BJT. MOSFET. JFET. Triode. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics In MOSFET devices the N-channel type is better the P-channel type in the following respects it is TTL compatible. it has better noise immunity. it has better drive capability. it is faster. it is TTL compatible. it has better noise immunity. it has better drive capability. it is faster. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics The conduction loss verses device current characteristics of power MOSFET in best approximately by a parabola. an exponentially decaying function. a straight line. a rectangular hyperbola. a parabola. an exponentially decaying function. a straight line. a rectangular hyperbola. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics For emitter bias, the voltage at the emitter is 0.7 V less than the base voltage. emitter voltage. ground voltage. collector voltage. base voltage. emitter voltage. ground voltage. collector voltage. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics An npn BJT has gm=38mA/v, cµ =10¯14 F, cπ =10¯13F and DC current gain β0=90.For this transistor fT & fβ are fT =1.33 x 1012 Hz & fβ = 1.47 x 1010 Hz fT =1.47 x 1010 Hz & fβ = 1.33 x 1012 Hz fT =1.47 x 1010 Hz & fβ = 1.64 x 108 Hz fT =1.64 x 108 Hz & fβ = 1.47 x 1010 Hz fT =1.33 x 1012 Hz & fβ = 1.47 x 1010 Hz fT =1.47 x 1010 Hz & fβ = 1.33 x 1012 Hz fT =1.47 x 1010 Hz & fβ = 1.64 x 108 Hz fT =1.64 x 108 Hz & fβ = 1.47 x 1010 Hz ANSWER DOWNLOAD EXAMIANS APP