Analog Electronics Electron mobility is defined as Drift velocity per unit field Diffusion velocity per unit field the movement of electrons None of these Drift velocity per unit field Diffusion velocity per unit field the movement of electrons None of these ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics Secondary breakdown occures in None of these. MOSFET but not in BJT. Both BJT and MOSFET. BJT but not is MOSFET. None of these. MOSFET but not in BJT. Both BJT and MOSFET. BJT but not is MOSFET. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics A silicon pn junction in forward condition has a voltage drop closer to 0.1 V. 2.1 V. 0.7 V. 1.7 V. 0.1 V. 2.1 V. 0.7 V. 1.7 V. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics In a normally biased npn transistor, the electrons in the emitter have enough energy to overcome the barrier potential of the base - emitter junction. base - collector junction. collector - base junction. recombination path. base - emitter junction. base - collector junction. collector - base junction. recombination path. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics A U shaped, opposite-polarity material built near a JFET-channel center is called the drain. heat sink. block. gate. drain. heat sink. block. gate. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics The most commonly used semiconductor is Sulphur Germanium Silicon Carbon Sulphur Germanium Silicon Carbon ANSWER DOWNLOAD EXAMIANS APP
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