Analog Electronics Which of the following statements is false? Push pull signals are equal and opposite in phase Class AB operation cannot be used for a push pull audio power output phase All of these A push pull output transformer has a centre-tapped primary Push pull signals are equal and opposite in phase Class AB operation cannot be used for a push pull audio power output phase All of these A push pull output transformer has a centre-tapped primary ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics Feedback circuit in an oscillator can be accomplished by Any one or combinations of the above methods Capacitive coupling between input and output Inductive coupling between input and output Resistive coupling between input and output Any one or combinations of the above methods Capacitive coupling between input and output Inductive coupling between input and output Resistive coupling between input and output ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics The majority carriers in the emitter of a PNP transistor are free electrons. pentavalent atoms. holes. trivalent atoms. free electrons. pentavalent atoms. holes. trivalent atoms. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics Thermal runaway is not possible in FET because as the temperature of FET increases None of these The mobility decreases The transconductance increases The drain current increases None of these The mobility decreases The transconductance increases The drain current increases ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics Which is the conversion of current done by diode ? DC to DC AC to DC None of these DC to AC DC to DC AC to DC None of these DC to AC ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics The magnitude of electric current ICBO depends largely upon emitter-base junction base potential. increases with the increase in temperature. is generally greater in silicon than in germanium transistor. depends largely upon the emitter doping. depends largely upon emitter-base junction base potential. increases with the increase in temperature. is generally greater in silicon than in germanium transistor. depends largely upon the emitter doping. ANSWER DOWNLOAD EXAMIANS APP
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