Analog Electronics Which of the following statements is false? All of these Push pull signals are equal and opposite in phase Class AB operation cannot be used for a push pull audio power output phase A push pull output transformer has a centre-tapped primary All of these Push pull signals are equal and opposite in phase Class AB operation cannot be used for a push pull audio power output phase A push pull output transformer has a centre-tapped primary ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics A electric current ratio of IC / IE is usually less than one and is called β. É. α. θ. β. É. α. θ. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics In a normally biased npn transistor, the electrons in the emitter have enough energy to overcome the barrier potential of the collector - base junction. base - emitter junction. recombination path. base - collector junction. collector - base junction. base - emitter junction. recombination path. base - collector junction. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics Three difference Q points are shown on a load line. The upper Q point represents the maximum current gain. minimum current gain. intermediate current gain. cutoff point. maximum current gain. minimum current gain. intermediate current gain. cutoff point. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics In an OP-amp differentiator The amplitude of output is proportional to input Polarity of input and output is the same The amplitude of output is proportional to rate of change of input Output occurs when input is finite and constant The amplitude of output is proportional to input Polarity of input and output is the same The amplitude of output is proportional to rate of change of input Output occurs when input is finite and constant ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics The magnitude of electric current ICBO depends largely upon the emitter doping. increases with the increase in temperature. is generally greater in silicon than in germanium transistor. depends largely upon emitter-base junction base potential. depends largely upon the emitter doping. increases with the increase in temperature. is generally greater in silicon than in germanium transistor. depends largely upon emitter-base junction base potential. ANSWER DOWNLOAD EXAMIANS APP
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