Analog Electronics In a p⁺n junction diode under reverse bias , the magnitude of electric field is maximum at The edge of the depletion region on the p-side The center of the depletion region on the n-side The p⁺n junction The edge of the depletion region on the n-side The edge of the depletion region on the p-side The center of the depletion region on the n-side The p⁺n junction The edge of the depletion region on the n-side ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics The collector characteristics of a common - emitter connected transistor may be used to find its output resistance . base current. voltage gain. input resistance. output resistance . base current. voltage gain. input resistance. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics The voltage gain of a loaded differential amp is equal to RC / re. impossible to determine. smaller than the unloaded voltage gain. large than the unloaded voltage gain. equal to RC / re. impossible to determine. smaller than the unloaded voltage gain. large than the unloaded voltage gain. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics An emitter follower has a voltage gain that is approximately equal to one. greater than one. much less than one. zero. approximately equal to one. greater than one. much less than one. zero. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics In CB configuration, the output V-I characteristics of a transistor are drawn by taking VCB versus IB for constant IE. VCB versus IC for constant IE. VCE versus IC for constant IE. VCB versus IB for constant IE. VCB versus IB for constant IE. VCB versus IC for constant IE. VCE versus IC for constant IE. VCB versus IB for constant IE. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics Electrons in p-type material of a semi-conductor are called as valance carriers minority carriers majority carriers either minority carriers or majority carriers valance carriers minority carriers majority carriers either minority carriers or majority carriers ANSWER DOWNLOAD EXAMIANS APP
EXAMIANS