Analog Electronics In a p⁺n junction diode under reverse bias , the magnitude of electric field is maximum at The edge of the depletion region on the n-side The p⁺n junction The edge of the depletion region on the p-side The center of the depletion region on the n-side The edge of the depletion region on the n-side The p⁺n junction The edge of the depletion region on the p-side The center of the depletion region on the n-side ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics An n- channel JFET has IDSS=2mA,and Vp=-4v.Its transconductance gm=in mA/V)for an applied gate to source voltage VGS=-2v is 0.25 0.75 0.5 1 0.25 0.75 0.5 1 ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics Darlington connection is achieved in 2 transistors by connecting grounding both collector. both collector. both emitter. both base. grounding both collector. both collector. both emitter. both base. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics A semiconductor diode is a processing device bilateral device linear device non-linear device a processing device bilateral device linear device non-linear device ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics Which of the following statements is false? A push pull output transformer has a centre-tapped primary All of these Push pull signals are equal and opposite in phase Class AB operation cannot be used for a push pull audio power output phase A push pull output transformer has a centre-tapped primary All of these Push pull signals are equal and opposite in phase Class AB operation cannot be used for a push pull audio power output phase ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics The resistance of pn junction when it is forward biased in the order of None of these Mega Ohm Ohm Kilo Ohm None of these Mega Ohm Ohm Kilo Ohm ANSWER DOWNLOAD EXAMIANS APP
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