Analog Electronics In a p⁺n junction diode under reverse bias , the magnitude of electric field is maximum at The edge of the depletion region on the p-side The p⁺n junction The edge of the depletion region on the n-side The center of the depletion region on the n-side The edge of the depletion region on the p-side The p⁺n junction The edge of the depletion region on the n-side The center of the depletion region on the n-side ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics Energy gap of semiconductor is approx > 8 eV . 1 eV. 5 - 8 eV. 0 eV. > 8 eV . 1 eV. 5 - 8 eV. 0 eV. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics What will happen if doping of an intrinsic semiconductor with pentavalent impurity atom ? Fermi level raises Fermi level fall None of these Fermi level not change Fermi level raises Fermi level fall None of these Fermi level not change ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics The leakage electric current of a pn junction is caused by heat energy. barrier potential. chemical energy. majority carriers. heat energy. barrier potential. chemical energy. majority carriers. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics IGFET is a square - law device. linear device. half - power device. 3 / 2 power - low device . square - law device. linear device. half - power device. 3 / 2 power - low device . ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics A U shaped, opposite-polarity material built near a JFET-channel center is called the block. drain. heat sink. gate. block. drain. heat sink. gate. ANSWER DOWNLOAD EXAMIANS APP
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