Analog Electronics In a p⁺n junction diode under reverse bias , the magnitude of electric field is maximum at The p⁺n junction The edge of the depletion region on the n-side The center of the depletion region on the n-side The edge of the depletion region on the p-side The p⁺n junction The edge of the depletion region on the n-side The center of the depletion region on the n-side The edge of the depletion region on the p-side ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics Which impurity is added into semiconductor to increase its conductivity ? intrinsic doping extrinsic None of these intrinsic doping extrinsic None of these ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics Reverse recovery current in a diode depends upon Forward field current. PIV. Temperature. Storage change. Forward field current. PIV. Temperature. Storage change. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics Common emitter current gain hFE of a BJT is Dependent on collector-emitter voltage. Dependent on collector current. Dependent on base -emitter voltage. Always constant. Dependent on collector-emitter voltage. Dependent on collector current. Dependent on base -emitter voltage. Always constant. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics A D - MOSFET is considered to be a high - power switch. normally off device. current controlled device. normally on device. high - power switch. normally off device. current controlled device. normally on device. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics In CB configuration, the output V-I characteristics of a transistor are drawn by taking VCE versus IC for constant IE. VCB versus IB for constant IE. VCB versus IC for constant IE. VCB versus IB for constant IE. VCE versus IC for constant IE. VCB versus IB for constant IE. VCB versus IC for constant IE. VCB versus IB for constant IE. ANSWER DOWNLOAD EXAMIANS APP
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