Analog Electronics When the drain saturation electric current is less than IDSS a JFET acts like a resistor. BJT. battery. current source. resistor. BJT. battery. current source. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics Which of the following is not a sinusoidal oscillator? LC oscillator Crystal oscillator RC phase shift oscillator Relaxation oscillator LC oscillator Crystal oscillator RC phase shift oscillator Relaxation oscillator ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics Which of the following transistor configuration circuit is much less temperature dependent ? Common collector. None of these Common emitter. Common base. Common collector. None of these Common emitter. Common base. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics When a transistor is connected in common emitter mode, it with have High input resistance and low output resistance Negligible input resistance and high output resistance Medium input resistance and high output resistance Low input resistance as well as output resistance High input resistance and low output resistance Negligible input resistance and high output resistance Medium input resistance and high output resistance Low input resistance as well as output resistance ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics An npn BJT has gm=38mA/v, cµ =10¯14 F, cπ =10¯13F and DC current gain β0=90.For this transistor fT & fβ are fT =1.47 x 1010 Hz & fβ = 1.64 x 108 Hz fT =1.64 x 108 Hz & fβ = 1.47 x 1010 Hz fT =1.33 x 1012 Hz & fβ = 1.47 x 1010 Hz fT =1.47 x 1010 Hz & fβ = 1.33 x 1012 Hz fT =1.47 x 1010 Hz & fβ = 1.64 x 108 Hz fT =1.64 x 108 Hz & fβ = 1.47 x 1010 Hz fT =1.33 x 1012 Hz & fβ = 1.47 x 1010 Hz fT =1.47 x 1010 Hz & fβ = 1.33 x 1012 Hz ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics The magnitude of electric current ICBO increases with the increase in temperature. depends largely upon emitter-base junction base potential. is generally greater in silicon than in germanium transistor. depends largely upon the emitter doping. increases with the increase in temperature. depends largely upon emitter-base junction base potential. is generally greater in silicon than in germanium transistor. depends largely upon the emitter doping. ANSWER DOWNLOAD EXAMIANS APP
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