Analog Electronics What is an energy gap? Space between two orbital shells Energy band in which electrons can move freely None of these Energy level at which an electron can exist Space between two orbital shells Energy band in which electrons can move freely None of these Energy level at which an electron can exist ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics Thermal runaway is not possible in FET because as the temperature of FET increases The transconductance increases The drain current increases None of these The mobility decreases The transconductance increases The drain current increases None of these The mobility decreases ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics The base of an npn transistor is thin and doped by a pentavalent material. metallic. lightly doped. heavily doped. doped by a pentavalent material. metallic. lightly doped. heavily doped. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics Avalanche breakdown in a diode occurs when reverse bias exceeds a certain value. None of these forward electric current exceeds certain value. potential barrier is reduced to zero. reverse bias exceeds a certain value. None of these forward electric current exceeds certain value. potential barrier is reduced to zero. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics The transition capacitance of a reverse biased pn junction having uniform doping on both sides, varies with junction voltage ( VB ) as VB. ( VB )- 1 / 2. ( VB )2. 1 / VB. VB. ( VB )- 1 / 2. ( VB )2. 1 / VB. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics In a N-type semiconductor material holes are ...................... High charge carriers Majority charge carriers Low charge carriers Minority charge carriers High charge carriers Majority charge carriers Low charge carriers Minority charge carriers ANSWER DOWNLOAD EXAMIANS APP
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