Analog Electronics Reverse saturation electric current in a silicon pn junction diode nearly doubles for very 2° rise in temperature. 5° rise in temperature. 6° rise in temperature. 10° rise in temperature. 2° rise in temperature. 5° rise in temperature. 6° rise in temperature. 10° rise in temperature. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics If the emitter resistor is open, the collector voltage is unchanged. unknown. high. low. unchanged. unknown. high. low. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics Energy gap of semiconductor is approx 1 eV. 5 - 8 eV. > 8 eV . 0 eV. 1 eV. 5 - 8 eV. > 8 eV . 0 eV. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics The effective channel length of a MOSFET in a saturation decreases with increase in Gate voltage Source voltage Drain voltage Body voltage Gate voltage Source voltage Drain voltage Body voltage ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics MOSFET uses the electric field of both (A) and (B). gate capacitance to control the channel current. barrier potential of p-n junction to control the channel current. none of these. both (A) and (B). gate capacitance to control the channel current. barrier potential of p-n junction to control the channel current. none of these. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics The reverse saturation electric current of a pn junction varies with temperature (T) as independent of T. T. T2. 1 / T. independent of T. T. T2. 1 / T. ANSWER DOWNLOAD EXAMIANS APP
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