Analog Electronics The transition capacitance of a reverse biased pn junction having uniform doping on both sides, varies with junction voltage ( VB ) as VB. ( VB )- 1 / 2. 1 / VB. ( VB )2. VB. ( VB )- 1 / 2. 1 / VB. ( VB )2. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics The junction capacitance of linearly graded junction varies with the applied reverse bias, VR as (VR)- 1. (VR)- 1/2. (VR)1/2. (VR)- 1/3. (VR)- 1. (VR)- 1/2. (VR)1/2. (VR)- 1/3. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics For transistor action the base region must be very thin and lightly doped. the emitter should be heavily doped. all of these. Je must be forward biased and Jc should be reverse biased. the base region must be very thin and lightly doped. the emitter should be heavily doped. all of these. Je must be forward biased and Jc should be reverse biased. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics For a transistor amplifier with self- biasing network, the following components are used: R1 = 4 KΩ, R2 = 4 KΩ and RE = 1 KΩ, the approximate value of stability factor will be 1.5. 2. 4. 3. 1.5. 2. 4. 3. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics Thermal runaway is not possible in FET because as the temperature of FET increases None of these The mobility decreases The transconductance increases The drain current increases None of these The mobility decreases The transconductance increases The drain current increases ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics The collector current is 1.5 mA. If the current gain is 50, the base current is 30 µA. 150 µA. 3 mA. 3 µA. 30 µA. 150 µA. 3 mA. 3 µA. ANSWER DOWNLOAD EXAMIANS APP
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