Analog Electronics The diffusion capacitance of a forward biased P+N junction diode with a steady electric current I depends on mean life time of the holes. width of the depleted region. mean life time of the electrons. junction area. mean life time of the holes. width of the depleted region. mean life time of the electrons. junction area. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics Which of following is the point of reference JFET? Drain. None of above. Gate. Source. Drain. None of above. Gate. Source. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics What is the majority carriers in "N" type material ? Electrons Holes Protons None of these Electrons Holes Protons None of these ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics What will be the Potential barrier for Ge Diode ? 0.5V 0.03V 0.3V 0.7V 0.5V 0.03V 0.3V 0.7V ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics Energy gap of conductor is 5 - 8 eV. 0 eV. 1 - 2 eV. 8 eV. 5 - 8 eV. 0 eV. 1 - 2 eV. 8 eV. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics MOSFET uses the electric field of both (A) and (B). none of these. barrier potential of p-n junction to control the channel current. gate capacitance to control the channel current. both (A) and (B). none of these. barrier potential of p-n junction to control the channel current. gate capacitance to control the channel current. ANSWER DOWNLOAD EXAMIANS APP
EXAMIANS