Analog Electronics The diffusion capacitance of a forward biased P+N junction diode with a steady electric current I depends on junction area. mean life time of the electrons. mean life time of the holes. width of the depleted region. junction area. mean life time of the electrons. mean life time of the holes. width of the depleted region. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics Which material behave like perfect insulators at low temperatures & conductor at higher temperature ? Ge All the above Si GaAs Ge All the above Si GaAs ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics When the drain saturation electric current is less than IDSS a JFET acts like a BJT. battery. current source. resistor. BJT. battery. current source. resistor. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics In a JFET, the primary control on drain electric current is exerted by gate reverse bias. channel resistance. size of depletion regions. voltage drop across channel. gate reverse bias. channel resistance. size of depletion regions. voltage drop across channel. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics Barrier potential at the temperature (25°C) is 0.7 V, its value at 125°C is 0.7 V. 0.5 V. 0.9 V. 0.3 V. 0.7 V. 0.5 V. 0.9 V. 0.3 V. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics MOSFET uses the electric field of both (A) and (B). gate capacitance to control the channel current. barrier potential of p-n junction to control the channel current. none of these. both (A) and (B). gate capacitance to control the channel current. barrier potential of p-n junction to control the channel current. none of these. ANSWER DOWNLOAD EXAMIANS APP
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