Analog Electronics The diffusion capacitance of a forward biased P+N junction diode with a steady electric current I depends on width of the depleted region. mean life time of the electrons. mean life time of the holes. junction area. width of the depleted region. mean life time of the electrons. mean life time of the holes. junction area. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics Electron mobility is defined as Diffusion velocity per unit field None of these the movement of electrons Drift velocity per unit field Diffusion velocity per unit field None of these the movement of electrons Drift velocity per unit field ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics A D - MOSFET can operate in the enhancement - mode only. low - impedance. depletion - mode or enhancement - mode. depletion - mode only . enhancement - mode only. low - impedance. depletion - mode or enhancement - mode. depletion - mode only . ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics Energy gap of semiconductor is approx 1 eV. 5 - 8 eV. 0 eV. > 8 eV . 1 eV. 5 - 8 eV. 0 eV. > 8 eV . ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics In n type semiconductor elements of which group of periodic table is added as dopant group 5. group 3. group 4. group 2. group 5. group 3. group 4. group 2. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics The voltage gain of a loaded differential amp is equal to RC / re. smaller than the unloaded voltage gain. large than the unloaded voltage gain. impossible to determine. equal to RC / re. smaller than the unloaded voltage gain. large than the unloaded voltage gain. impossible to determine. ANSWER DOWNLOAD EXAMIANS APP
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