Analog Electronics The diffusion capacitance of a forward biased P+N junction diode with a steady electric current I depends on mean life time of the holes. junction area. width of the depleted region. mean life time of the electrons. mean life time of the holes. junction area. width of the depleted region. mean life time of the electrons. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics In a MOSFET, the polarity of the inversion layer is the same as that of the minority carriers in the drain . charge on the gate electrode. majority carries in the source . majority carries in the substrate. minority carriers in the drain . charge on the gate electrode. majority carries in the source . majority carries in the substrate. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics A depletion MOSFET differs from a JFET in the sense that it has no channel. substrate. gate. p - n junction. channel. substrate. gate. p - n junction. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics For a diode, reverse recovery time is defined as the time between the instant diode current becomes zero and the instant reverse recovery current decays to 10% of reverse peak current. 15% of reverse peak current. 0. 25% of reverse peak current. 10% of reverse peak current. 15% of reverse peak current. 0. 25% of reverse peak current. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics An n- channel JFET has IDSS=2mA,and Vp=-4v.Its transconductance gm=in mA/V)for an applied gate to source voltage VGS=-2v is 1 0.25 0.75 0.5 1 0.25 0.75 0.5 ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics Large electric current flow of a BJT occurs in collector. in base. in emitter. through emitter-collector in collector. in base. in emitter. through emitter-collector ANSWER DOWNLOAD EXAMIANS APP
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