Materials and Components
In an intrinsic semiconductor, at a given temperature T

The number of electrons-hole pairs generated per second due to thermal motion are equal to the number of electron-hole pairs lost per second due to recombination
The number of electron-hole pairs generated per second due to thermal motion is always less than the number of electron-hole pairs lost per second due to recombination
The number of electron hole pairs generated per second due to thermal motion is always more than the number of electron-hole pairs lost per second due to recombination
Any of the above

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Materials and Components
An atom of a rare gas is placed is an electric field E. Then

The nucleus will not be shifted.
The nucleus will be shifted in the direction of E by an amount which is proportional to E.
The nucleus will be shifted in a direction opposite to that of E.
The nucleus will be shifted in the direction of E by an amount which is independent of E.

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Materials and Components
At room temperature the number of conducting electrons in an intrinsic semiconductor

Is small as compared to the number of valence electrons
Is about half the number of valence electrons
Is almost equal to the number of valence electrons
Is a very small fraction of the number of valence electrons

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