Materials and Components
In an intrinsic semiconductor, at a given temperature T

The number of electrons-hole pairs generated per second due to thermal motion are equal to the number of electron-hole pairs lost per second due to recombination
Any of the above
The number of electron hole pairs generated per second due to thermal motion is always more than the number of electron-hole pairs lost per second due to recombination
The number of electron-hole pairs generated per second due to thermal motion is always less than the number of electron-hole pairs lost per second due to recombination

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Materials and Components
With increase in temperature, the electrical conductivity would

Increase in metals as well as in intrinsic semiconductor
Decrease in metals but increase in intrinsic semiconductor
Decrease in metals as well as in intrinsic semiconductor
Increase in metals but decrease in intrinsic semiconductor

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Materials and Components
The residual resistivity of a binary alloy at 0 K is

Difference of residual resistivities of component metals
Sum of residual resistivities of component metals
Product of residual resistivities of component metals
Dependent on the concentration of minor component in the alloy

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