Analog Electronics The current gain of a BJT is gm /rπ gm / r0 gm r0 gm rπ gm /rπ gm / r0 gm r0 gm rπ ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics When will be the P-N junction is formed ? In reverse biased region Two opposite doped materials In depletion region None of these In reverse biased region Two opposite doped materials In depletion region None of these ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics CMOS stands for p - channel and n - channel devices. active - load switching. common MOS. complementary MOS. p - channel and n - channel devices. active - load switching. common MOS. complementary MOS. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics The barrier potential across each silicon depletion layer is 0.3 V. 0 V. 0.7 V. 1 V. 0.3 V. 0 V. 0.7 V. 1 V. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics When the Q point moves along the load line, VCE decreases when the collector current stays the same. None of these decreases. increases. stays the same. None of these decreases. increases. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics A working diode must have High resistance when forward biased, while low resistance when reverse bias Low resistance when forward or reverse biased Low resistance when forward biased, while high resistance when reverse bias High resistance when forward or reverse biased High resistance when forward biased, while low resistance when reverse bias Low resistance when forward or reverse biased Low resistance when forward biased, while high resistance when reverse bias High resistance when forward or reverse biased ANSWER DOWNLOAD EXAMIANS APP
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