MICROPROCESSOR QUIZ

Most small - signal E - MOSFETs are found in

disk drives.

heavy - current applications.

discrete circuits.

integrated circuit.

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The early effect in a bipolar junction transistor is caused by

Large emitter-base forward bias

Fast turn-off

Fast turn-on

Large collector-base reverse bias

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When the JFET is no longer able to control the current, this point is called the

breakdown region.

pinch-off region.

saturated point.

depletion region.

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A forward potential of 10 V is applied to a silicon diode. A resistance of 1KÃŽÂ© is also in series with the diode. The electric current is

0.7 mA.

10 mA.

9.3 mA.

0.

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An instrumentation amplifier has a high

supply voltage.

power gain.

output impedance.

CMMR.

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When a junction diode is Reverse Biased then diode acts like .......................

Close switch

Short switch

None of these

An open switch

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The barrier potential across each silicon depletion layer is

0.3 V.

0.7 V.

1 V.

0 V.

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The voltage gain of a loaded differential amp is

large than the unloaded voltage gain.

smaller than the unloaded voltage gain.

equal to RC / re.

impossible to determine.

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Secondary breakdown occures in

MOSFET but not in BJT.

None of these.

BJT but not is MOSFET.

Both BJT and MOSFET.

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Electrons in p-type material of a semi-conductor are called as

valance carriers

majority carriers

either minority carriers or majority carriers

minority carriers

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