Most small - signal E - MOSFETs are found in disk drives. heavy - current applications. discrete circuits. integrated circuit. TRUE ANSWER : ? YOUR ANSWER : ?
The early effect in a bipolar junction transistor is caused by Large emitter-base forward bias Fast turn-off Fast turn-on Large collector-base reverse bias TRUE ANSWER : ? YOUR ANSWER : ?
When the JFET is no longer able to control the current, this point is called the breakdown region. pinch-off region. saturated point. depletion region. TRUE ANSWER : ? YOUR ANSWER : ?
A forward potential of 10 V is applied to a silicon diode. A resistance of 1KΩ is also in series with the diode. The electric current is 0.7 mA. 10 mA. 9.3 mA. 0. TRUE ANSWER : ? YOUR ANSWER : ?
An instrumentation amplifier has a high supply voltage. power gain. output impedance. CMMR. TRUE ANSWER : ? YOUR ANSWER : ?
When a junction diode is Reverse Biased then diode acts like ....................... Close switch Short switch None of these An open switch TRUE ANSWER : ? YOUR ANSWER : ?
The barrier potential across each silicon depletion layer is 0.3 V. 0.7 V. 1 V. 0 V. TRUE ANSWER : ? YOUR ANSWER : ?
The voltage gain of a loaded differential amp is large than the unloaded voltage gain. smaller than the unloaded voltage gain. equal to RC / re. impossible to determine. TRUE ANSWER : ? YOUR ANSWER : ?
Secondary breakdown occures in MOSFET but not in BJT. None of these. BJT but not is MOSFET. Both BJT and MOSFET. TRUE ANSWER : ? YOUR ANSWER : ?
Electrons in p-type material of a semi-conductor are called as valance carriers majority carriers either minority carriers or majority carriers minority carriers TRUE ANSWER : ? YOUR ANSWER : ?