An n- channel JFET has IDSS=2mA,and Vp=-4v.Its transconductance gm=in mA/V)for an applied gate to source voltage VGS=-2v is 1 0.75 0.5 0.25 TRUE ANSWER : ? YOUR ANSWER : ?
Thermal runaway is not possible in FET because as the temperature of FET increases None of these The drain current increases The mobility decreases The transconductance increases TRUE ANSWER : ? YOUR ANSWER : ?
When P-type substance is connected with negative and n-type is connected with positive terminal of the battery then P-n junction diode is in .................... Reverse biased No biased None of these Forward biased TRUE ANSWER : ? YOUR ANSWER : ?
When the pn junction is forward biased the sequence of events that take place are none of above. diffusion, drift and recombination. injection, diffusion and recombination. diffusion, injection and drift. TRUE ANSWER : ? YOUR ANSWER : ?
Three identical amplifiers with each one having a voltage gain of 50,input resistance of 1KΩ & output resistance of 250, are cascaded. The open circuit voltage gain of combined amplifier is 49dB 98dB 51dB 102dB TRUE ANSWER : ? YOUR ANSWER : ?
When will be the P-N junction is formed ? None of these In depletion region Two opposite doped materials In reverse biased region TRUE ANSWER : ? YOUR ANSWER : ?
What is mean by the outermost orbit of an atom ? Valence orbit None of these Energy band Conduction band TRUE ANSWER : ? YOUR ANSWER : ?
The reverse saturation electric current of a pn junction varies with temperature (T) as T. 1 / T. T2. independent of T. TRUE ANSWER : ? YOUR ANSWER : ?
Suppose the base resistor is open. The Q point will be off the load line. at the lower end of the load line. in the middle of the load line. at the upper end of the load line. TRUE ANSWER : ? YOUR ANSWER : ?
A zener diode is a battery. has a constant voltage in the breakdown region. has a barrier potential of 1 V. is forward biased. TRUE ANSWER : ? YOUR ANSWER : ?