29 DECEMBER 2021 CURRENT AFFAIRS QUIZ

Which of following is normally ON device

IGBT.

BJT.

SIT.

TRIAC.

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In a P1N1P2N2 thyristor which layer is less doped ?

P2.

N1.

N2.

P1.

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A diac has ___________ semiconductor layers

Two

Four

Three

None of these

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The maximum di/dt in a SCR is

Both A and B.

Directly proportional to supply voltage.

Inversely proportional to supply voltage.

Directly proportional to inductance in the circuit.

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When the emitter terminal of a UJT is open, the resistance between the base terminal is generally ___________.

Low

Extremely low

High

None of these

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Snubber circuit is used with SCR

anti parallel.

in parallel.

in series.

either series or parallel.

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If a latching current for the circuit shown in figure is 2 mA. Obtain the value of minimum width of the property turn ON the SCR?

3.2 µs

3 µs.

3.1 µs

3.3 µs

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Gate circuit or triggering circuit of a thyristor is

magnetic circuit.

lower power circuit.

high power circuit.

may be low power or high power circuit.

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When the temperature increases, the inter-base resistance (RBB) of a UJT ___________.

Decreases

None of these

Increases

Remains the same

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Which statement is true for latching current ?

It is related to turn on process of the device.

It is related to turn off process of the device.

It is related to conduction process of device.

Both C and D.

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