Analog Electronics MOSFET uses the electric field of both (A) and (B). none of these. barrier potential of p-n junction to control the channel current. gate capacitance to control the channel current. both (A) and (B). none of these. barrier potential of p-n junction to control the channel current. gate capacitance to control the channel current. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics The leakage electric current of a pn junction is caused by majority carriers. heat energy. barrier potential. chemical energy. majority carriers. heat energy. barrier potential. chemical energy. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics Most of the electrons in the base of an NPN transistor flow into the collector. into the emitter. into the base supply. out of the base lead. into the collector. into the emitter. into the base supply. out of the base lead. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics The magnitude of electric current ICBO depends largely upon emitter-base junction base potential. is generally greater in silicon than in germanium transistor. increases with the increase in temperature. depends largely upon the emitter doping. depends largely upon emitter-base junction base potential. is generally greater in silicon than in germanium transistor. increases with the increase in temperature. depends largely upon the emitter doping. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics For a diode, reverse recovery time is defined as the time between the instant diode current becomes zero and the instant reverse recovery current decays to 0. 10% of reverse peak current. 15% of reverse peak current. 25% of reverse peak current. 0. 10% of reverse peak current. 15% of reverse peak current. 25% of reverse peak current. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics If a transistor operates at the middle of the load line, a decrease in the current gain will move the Q point off the load line. up. nowhere. down. off the load line. up. nowhere. down. ANSWER DOWNLOAD EXAMIANS APP
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