Analog Electronics In a properly biased NPN transistor most of the electrons from the emitter pass through the base to the collector. recombine with holes in the base . are stopped by the junction barrier. recombine in the emitter its self. pass through the base to the collector. recombine with holes in the base . are stopped by the junction barrier. recombine in the emitter its self. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics What is the input impedance of a common-gate configured JFET? Low. High. Very high. Very low. Low. High. Very high. Very low. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics Electron mobility is defined as Drift velocity per unit field None of these the movement of electrons Diffusion velocity per unit field Drift velocity per unit field None of these the movement of electrons Diffusion velocity per unit field ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics In CB configuration, the output V-I characteristics of a transistor are drawn by taking VCE versus IC for constant IE. VCB versus IB for constant IE. VCB versus IB for constant IE. VCB versus IC for constant IE. VCE versus IC for constant IE. VCB versus IB for constant IE. VCB versus IB for constant IE. VCB versus IC for constant IE. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics In a JFET, if the gate voltage Vgs is made more negative, then channel conductivity increases. channel electric current increases . channel conductivity decreases. depletion region decreases. channel conductivity increases. channel electric current increases . channel conductivity decreases. depletion region decreases. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics The knee voltage (cut in voltage) of silicon diode 0.2 V. 0.8 V. 0.7 V. 1.0 V. 0.2 V. 0.8 V. 0.7 V. 1.0 V. ANSWER DOWNLOAD EXAMIANS APP
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