Analog Electronics Energy gap of semiconductor is approx > 8 eV . 5 - 8 eV. 0 eV. 1 eV. > 8 eV . 5 - 8 eV. 0 eV. 1 eV. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics Why is silicon preferred than germanium ? Current sensitivity of silicon with temperature is less Silicon has higher tolerance to temperature All the above Leakage current due to minority charge carrier is less in silicon Current sensitivity of silicon with temperature is less Silicon has higher tolerance to temperature All the above Leakage current due to minority charge carrier is less in silicon ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics In a p⁺n junction diode under reverse bias , the magnitude of electric field is maximum at The p⁺n junction The edge of the depletion region on the p-side The center of the depletion region on the n-side The edge of the depletion region on the n-side The p⁺n junction The edge of the depletion region on the p-side The center of the depletion region on the n-side The edge of the depletion region on the n-side ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics What is an energy gap? Energy band in which electrons can move freely None of these Energy level at which an electron can exist Space between two orbital shells Energy band in which electrons can move freely None of these Energy level at which an electron can exist Space between two orbital shells ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics The transition capacitance of a reverse biased pn junction having uniform doping on both sides, varies with junction voltage ( VB ) as ( VB )- 1 / 2. 1 / VB. ( VB )2. VB. ( VB )- 1 / 2. 1 / VB. ( VB )2. VB. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics What will be the result if pentavalent impurity is added to pure germanium or silicon ? None of these N-type semiconductor Intrinsic semiconductor P-type semiconductor None of these N-type semiconductor Intrinsic semiconductor P-type semiconductor ANSWER DOWNLOAD EXAMIANS APP
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