Analog Electronics Energy gap of semiconductor is approx > 8 eV . 1 eV. 5 - 8 eV. 0 eV. > 8 eV . 1 eV. 5 - 8 eV. 0 eV. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics The leakage electric current of a pn junction is caused by chemical energy. barrier potential. majority carriers. heat energy. chemical energy. barrier potential. majority carriers. heat energy. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics In a JFET, the primary control on drain electric current is exerted by gate reverse bias. channel resistance. size of depletion regions. voltage drop across channel. gate reverse bias. channel resistance. size of depletion regions. voltage drop across channel. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics For a transistor amplifier with self- biasing network, the following components are used: R1 = 4 KΩ, R2 = 4 KΩ and RE = 1 KΩ, the approximate value of stability factor will be 1.5. 3. 2. 4. 1.5. 3. 2. 4. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics In CB configuration, the output V-I characteristics of a transistor are drawn by taking VCE versus IC for constant IE. VCB versus IB for constant IE. VCB versus IB for constant IE. VCB versus IC for constant IE. VCE versus IC for constant IE. VCB versus IB for constant IE. VCB versus IB for constant IE. VCB versus IC for constant IE. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics The forbidden energy gap between valance band and conduction band in semiconductor material is about 1eV None of these 15 eV 0 eV 1eV None of these 15 eV 0 eV ANSWER DOWNLOAD EXAMIANS APP
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