ANALOG ELECTRONICS

  the emitter should be heavily doped.

  the base region must be very thin and lightly doped.

  Je must be forward biased and Jc should be reverse biased.

  all of these.

  in the reverse direction to the emitter junction with collector open.

  in the reverse direction to the collector junction with emitter open.

  in the forward direction to the emitter junction with collector open.

  in the forward direction to the collector junction with emitter open.

  increases with the increase in temperature.

  depends largely upon emitter-base junction base potential.

  depends largely upon the emitter doping.

  is generally greater in silicon than in germanium transistor.

  none of them.

  collector and base leads.

  emitter and collector leads.

  emitter and base leads.

  in base.

  in collector.

  in emitter.

  through emitter-collector