ANALOG ELECTRONICS

  the base region must be very thin and lightly doped.

  all of these.

  the emitter should be heavily doped.

  Je must be forward biased and Jc should be reverse biased.

  in the reverse direction to the collector junction with emitter open.

  in the forward direction to the emitter junction with collector open.

  in the reverse direction to the emitter junction with collector open.

  in the forward direction to the collector junction with emitter open.

  depends largely upon emitter-base junction base potential.

  depends largely upon the emitter doping.

  increases with the increase in temperature.

  is generally greater in silicon than in germanium transistor.

  collector and base leads.

  emitter and collector leads.

  none of them.

  emitter and base leads.

  in base.

  through emitter-collector

  in collector.

  in emitter.