ANALOG ELECTRONICS

  the emitter should be heavily doped.

  Je must be forward biased and Jc should be reverse biased.

  all of these.

  the base region must be very thin and lightly doped.

  in the forward direction to the collector junction with emitter open.

  in the reverse direction to the emitter junction with collector open.

  in the reverse direction to the collector junction with emitter open.

  in the forward direction to the emitter junction with collector open.

  depends largely upon the emitter doping.

  depends largely upon emitter-base junction base potential.

  increases with the increase in temperature.

  is generally greater in silicon than in germanium transistor.

  collector and base leads.

  none of them.

  emitter and collector leads.

  emitter and base leads.

  in base.

  through emitter-collector

  in collector.

  in emitter.