ANALOG ELECTRONICS

  Je must be forward biased and Jc should be reverse biased.

  the emitter should be heavily doped.

  all of these.

  the base region must be very thin and lightly doped.

  in the forward direction to the emitter junction with collector open.

  in the reverse direction to the collector junction with emitter open.

  in the reverse direction to the emitter junction with collector open.

  in the forward direction to the collector junction with emitter open.

  is generally greater in silicon than in germanium transistor.

  depends largely upon the emitter doping.

  increases with the increase in temperature.

  depends largely upon emitter-base junction base potential.

  none of them.

  emitter and collector leads.

  emitter and base leads.

  collector and base leads.

  in collector.

  in emitter.

  through emitter-collector

  in base.