Analog Electronics The magnitude of electric current ICBO increases with the increase in temperature. is generally greater in silicon than in germanium transistor. depends largely upon the emitter doping. depends largely upon emitter-base junction base potential. increases with the increase in temperature. is generally greater in silicon than in germanium transistor. depends largely upon the emitter doping. depends largely upon emitter-base junction base potential. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics The number of valence electrons in silicon atom are : 3 4 2 1 3 4 2 1 ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics In a rectifier circuit, the diode converts both (A) and (C) options are connect. alternating current to direct voltage. alternating voltage to direct voltage. alternating voltage to direct current. both (A) and (C) options are connect. alternating current to direct voltage. alternating voltage to direct voltage. alternating voltage to direct current. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics For a diode, reverse recovery time is defined as the time between the instant diode current becomes zero and the instant reverse recovery current decays to 0. 25% of reverse peak current. 10% of reverse peak current. 15% of reverse peak current. 0. 25% of reverse peak current. 10% of reverse peak current. 15% of reverse peak current. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics Which of the following is trivalent impurity ? Antimony None of these Boron Silicon Antimony None of these Boron Silicon ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics The conduction loss verses device current characteristics of power MOSFET in best approximately by a parabola. a straight line. an exponentially decaying function. a rectangular hyperbola. a parabola. a straight line. an exponentially decaying function. a rectangular hyperbola. ANSWER DOWNLOAD EXAMIANS APP
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