Analog Electronics
The magnitude of electric current ICBO

  depends largely upon the emitter doping.
  depends largely upon emitter-base junction base potential.
  is generally greater in silicon than in germanium transistor.
  increases with the increase in temperature.

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Analog Electronics
For an NPN transistor in normal bias

  Je is forward biased and Jc is reverse biased.
  only holes cross the collector junction.
  the emitter junction has high resistance.
  only majority carriers cross the collector junction.

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