Analog Electronics The magnitude of electric current ICBO depends largely upon emitter-base junction base potential. increases with the increase in temperature. is generally greater in silicon than in germanium transistor. depends largely upon the emitter doping. depends largely upon emitter-base junction base potential. increases with the increase in temperature. is generally greater in silicon than in germanium transistor. depends largely upon the emitter doping. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics In a JFET, the primary control on drain electric current is exerted by gate reverse bias. channel resistance. size of depletion regions. voltage drop across channel. gate reverse bias. channel resistance. size of depletion regions. voltage drop across channel. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics The feedback factor of a Wien bridge oscillator using Op-Amp is 1/2 1 1/3 1/4 1/2 1 1/3 1/4 ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics The leakage current in a pn junction is in order of µA None of these KA A µA None of these KA A ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics Asource follower using an FET usually has a voltage gain which is Slightly less than unity but positive About -10 Exactly unity but negative Greater than +100 Slightly less than unity but positive About -10 Exactly unity but negative Greater than +100 ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics The barrier potential across each silicon depletion layer is 1 V. 0.7 V. 0 V. 0.3 V. 1 V. 0.7 V. 0 V. 0.3 V. ANSWER DOWNLOAD EXAMIANS APP
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