Analog Electronics The magnitude of electric current ICBO depends largely upon emitter-base junction base potential. increases with the increase in temperature. is generally greater in silicon than in germanium transistor. depends largely upon the emitter doping. depends largely upon emitter-base junction base potential. increases with the increase in temperature. is generally greater in silicon than in germanium transistor. depends largely upon the emitter doping. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics In a N-type semiconductor material holes are ...................... Minority charge carriers Majority charge carriers High charge carriers Low charge carriers Minority charge carriers Majority charge carriers High charge carriers Low charge carriers ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics Under normal reverse bias voltage applied to diode, the reverse electric current in Si diode 100 mA. order of micro A. none of them. 1000 micro A. 100 mA. order of micro A. none of them. 1000 micro A. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics If the emitter resistance increases, the collector voltage breaks down the transistor. stays the same. decreases. increases. breaks down the transistor. stays the same. decreases. increases. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics Most of the electrons in the base of an NPN transistor flow into the base supply. into the emitter. into the collector. out of the base lead. into the base supply. into the emitter. into the collector. out of the base lead. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics The voltage gain of a loaded differential amp is smaller than the unloaded voltage gain. impossible to determine. equal to RC / re. large than the unloaded voltage gain. smaller than the unloaded voltage gain. impossible to determine. equal to RC / re. large than the unloaded voltage gain. ANSWER DOWNLOAD EXAMIANS APP
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