Analog Electronics The magnitude of electric current ICBO depends largely upon the emitter doping. is generally greater in silicon than in germanium transistor. increases with the increase in temperature. depends largely upon emitter-base junction base potential. depends largely upon the emitter doping. is generally greater in silicon than in germanium transistor. increases with the increase in temperature. depends largely upon emitter-base junction base potential. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics A small collector current with zero base current is caused by the leakage current of the collector diode. emitter diode. transistor. base diode. collector diode. emitter diode. transistor. base diode. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics An npn BJT has gm=38mA/v, cµ =10¯14 F, cπ =10¯13F and DC current gain β0=90.For this transistor fT & fβ are fT =1.64 x 108 Hz & fβ = 1.47 x 1010 Hz fT =1.47 x 1010 Hz & fβ = 1.64 x 108 Hz fT =1.47 x 1010 Hz & fβ = 1.33 x 1012 Hz fT =1.33 x 1012 Hz & fβ = 1.47 x 1010 Hz fT =1.64 x 108 Hz & fβ = 1.47 x 1010 Hz fT =1.47 x 1010 Hz & fβ = 1.64 x 108 Hz fT =1.47 x 1010 Hz & fβ = 1.33 x 1012 Hz fT =1.33 x 1012 Hz & fβ = 1.47 x 1010 Hz ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics In a JFET, if the gate voltage Vgs is made more negative, then depletion region decreases. channel conductivity decreases. channel electric current increases . channel conductivity increases. depletion region decreases. channel conductivity decreases. channel electric current increases . channel conductivity increases. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics If the base supply voltage increase, the Q point moves up. down. off the load line. nowhere. up. down. off the load line. nowhere. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics The input impedance of the base of an emitter follower is usually high. open. low. shorted to ground. high. open. low. shorted to ground. ANSWER DOWNLOAD EXAMIANS APP
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