Analog Electronics The magnitude of electric current ICBO depends largely upon the emitter doping. increases with the increase in temperature. is generally greater in silicon than in germanium transistor. depends largely upon emitter-base junction base potential. depends largely upon the emitter doping. increases with the increase in temperature. is generally greater in silicon than in germanium transistor. depends largely upon emitter-base junction base potential. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics Reverse saturation electric current in a silicon pn junction diode nearly doubles for very 10° rise in temperature. 5° rise in temperature. 6° rise in temperature. 2° rise in temperature. 10° rise in temperature. 5° rise in temperature. 6° rise in temperature. 2° rise in temperature. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics At the unity-gain frequency, the open-loop voltage gain is very large zero. 1. AV(mid). very large zero. 1. AV(mid). ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics In the active region, the collector current is not changed significantly by current gain. collector resistance. base current. base supply voltage. current gain. collector resistance. base current. base supply voltage. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics Which is the third region where no charge carriers are present when n-type and p-type are attached together ? Forward region Depletion region Reversed region None of these Forward region Depletion region Reversed region None of these ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics The majority carriers in the emitter of a PNP transistor are trivalent atoms. holes. pentavalent atoms. free electrons. trivalent atoms. holes. pentavalent atoms. free electrons. ANSWER DOWNLOAD EXAMIANS APP
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