Analog Electronics The magnitude of electric current ICBO depends largely upon the emitter doping. is generally greater in silicon than in germanium transistor. depends largely upon emitter-base junction base potential. increases with the increase in temperature. depends largely upon the emitter doping. is generally greater in silicon than in germanium transistor. depends largely upon emitter-base junction base potential. increases with the increase in temperature. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics A semiconductor diode is linear device bilateral device non-linear device a processing device linear device bilateral device non-linear device a processing device ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics In deriving ac equivalent circuit for an amplifier circuit we short circuit All capacitors All transistors All resistors All inductors All capacitors All transistors All resistors All inductors ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics When were the first solid state devices manufactured ? 1960 1950 1940 1970 1960 1950 1940 1970 ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics An n- channel JFET has IDSS=2mA,and Vp=-4v.Its transconductance gm=in mA/V)for an applied gate to source voltage VGS=-2v is 0.5 1 0.75 0.25 0.5 1 0.75 0.25 ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics When a reverse bias is applied to gate of JFET the depletion region width is wider near the drain and tapers near source. None of these is uniform in the channel. is wider near the source and tapers near the drain. is wider near the drain and tapers near source. None of these is uniform in the channel. is wider near the source and tapers near the drain. ANSWER DOWNLOAD EXAMIANS APP
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