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ANALOG ELECTRONICS

Analog Electronics
For a reverse biased pn junction, the electric current through the junction increases abruptly at

  7.2 eV.
  0.2 eV.
  0 V.
  breakdown voltage.

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Analog Electronics
The reverse saturation electric current of a pn junction varies with temperature (T) as

  T2.
  1 / T.
  independent of T.
  T.

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Analog Electronics
The transition capacitance of a reverse biased pn junction having uniform doping on both sides, varies with junction voltage ( VB ) as

  ( VB )- 1 / 2.
  ( VB )2.
  VB.
  1 / VB.

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Analog Electronics
The leakage electric current of a pn junction is caused by

  majority carriers.
  heat energy.
  chemical energy.
  barrier potential.

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Analog Electronics
The junction capacitance of linearly graded junction varies with the applied reverse bias, VR as

  (VR)- 1.
  (VR)1/2.
  (VR)- 1/2.
  (VR)- 1/3.

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