Analog Electronics A silicon pn junction in forward condition has a voltage drop closer to 2.1 V. 1.7 V. 0.7 V. 0.1 V. 2.1 V. 1.7 V. 0.7 V. 0.1 V. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics Thermal runaway is not possible in FET because as the temperature of FET increases The transconductance increases None of these The drain current increases The mobility decreases The transconductance increases None of these The drain current increases The mobility decreases ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics Which of the following is expected to have highest input impedance? CE bipolar transistor. JEFT amplifier. MOSFET. Common collector bipolar transistor CE bipolar transistor. JEFT amplifier. MOSFET. Common collector bipolar transistor ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics Silicon and Germanium are ________ elements. pentavalant trivalant tetravalant hexavalant pentavalant trivalant tetravalant hexavalant ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics The diffusion capacitance of a forward biased P+N junction diode with a steady electric current I depends on width of the depleted region. mean life time of the electrons. junction area. mean life time of the holes. width of the depleted region. mean life time of the electrons. junction area. mean life time of the holes. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics The common-mode voltage gain is smaller than the voltage gain. equal to the voltage gain. greater than the voltage gain. None of these smaller than the voltage gain. equal to the voltage gain. greater than the voltage gain. None of these ANSWER DOWNLOAD EXAMIANS APP
EXAMIANS