Analog Electronics Common emitter current gain hFE of a BJT is Always constant. Dependent on collector current. Dependent on base -emitter voltage. Dependent on collector-emitter voltage. Always constant. Dependent on collector current. Dependent on base -emitter voltage. Dependent on collector-emitter voltage. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics Barrier potential at the temperature (25°C) is 0.7 V, its value at 125°C is 0.5 V. 0.3 V. 0.9 V. 0.7 V. 0.5 V. 0.3 V. 0.9 V. 0.7 V. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics The barrier potential across each silicon depletion layer is 1 V. 0.3 V. 0 V. 0.7 V. 1 V. 0.3 V. 0 V. 0.7 V. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics In MOSFET devices the N-channel type is better the P-channel type in the following respects it has better drive capability. it has better noise immunity. it is TTL compatible. it is faster. it has better drive capability. it has better noise immunity. it is TTL compatible. it is faster. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics When P-type substance is connected with positive and N-type is connected with negative terminal then P-N junction diode is in .................... Forward biased None of these Reverse biased No biased Forward biased None of these Reverse biased No biased ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics Large electric current flow of a BJT occurs through emitter-collector in collector. in emitter. in base. through emitter-collector in collector. in emitter. in base. ANSWER DOWNLOAD EXAMIANS APP
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