Analog Electronics Common emitter current gain hFE of a BJT is Dependent on collector-emitter voltage. Always constant. Dependent on base -emitter voltage. Dependent on collector current. Dependent on collector-emitter voltage. Always constant. Dependent on base -emitter voltage. Dependent on collector current. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics When a reverse bias is applied to gate of JFET the depletion region width is wider near the source and tapers near the drain. is wider near the drain and tapers near source. None of these is uniform in the channel. is wider near the source and tapers near the drain. is wider near the drain and tapers near source. None of these is uniform in the channel. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics Under normal reverse bias voltage applied to diode, the reverse electric current in Si diode 1000 micro A. order of micro A. 100 mA. none of them. 1000 micro A. order of micro A. 100 mA. none of them. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics IGFET is a square - law device. 3 / 2 power - low device . half - power device. linear device. square - law device. 3 / 2 power - low device . half - power device. linear device. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics The collector current is 1.5 mA. If the current gain is 50, the base current is 3 µA. 30 µA. 150 µA. 3 mA. 3 µA. 30 µA. 150 µA. 3 mA. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics In an NPN transistor, the majority carriers in the emitter are free electrons. holes. both. neither. free electrons. holes. both. neither. ANSWER DOWNLOAD EXAMIANS APP
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