Analog Electronics Common emitter current gain hFE of a BJT is Dependent on base -emitter voltage. Dependent on collector-emitter voltage. Always constant. Dependent on collector current. Dependent on base -emitter voltage. Dependent on collector-emitter voltage. Always constant. Dependent on collector current. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics The properties of JFET resemble those of PNP transistors. thermionic valves. NPN transistors. UJT. PNP transistors. thermionic valves. NPN transistors. UJT. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics The knee voltage (cut in voltage) of silicon diode 0.8 V. 0.7 V. 0.2 V. 1.0 V. 0.8 V. 0.7 V. 0.2 V. 1.0 V. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics Ignoring the bulk resistance of the collector diode, the collector-emitter saturation voltage is 1 V. a few tenths of a volt. supply voltage. 0. 1 V. a few tenths of a volt. supply voltage. 0. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics Avalanche breakdown in a diode occurs when potential barrier is reduced to zero. forward electric current exceeds certain value. None of these reverse bias exceeds a certain value. potential barrier is reduced to zero. forward electric current exceeds certain value. None of these reverse bias exceeds a certain value. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics In which mode of BJT operation are both junction forward biased active. reverse active. saturation. cut off. active. reverse active. saturation. cut off. ANSWER DOWNLOAD EXAMIANS APP
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