Analog Electronics Common emitter current gain hFE of a BJT is Dependent on base -emitter voltage. Always constant. Dependent on collector current. Dependent on collector-emitter voltage. Dependent on base -emitter voltage. Always constant. Dependent on collector current. Dependent on collector-emitter voltage. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics Example of donor atom is Antimony Silicon Both A and B Germinium Antimony Silicon Both A and B Germinium ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics Large electric current flow of a BJT occurs in emitter. through emitter-collector in base. in collector. in emitter. through emitter-collector in base. in collector. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics In modern the MOSFET, the material used for the gate is high - purity silica. epitaxially grown silicon. heavily doped poly crystalline silicon. high - purity silicon. high - purity silica. epitaxially grown silicon. heavily doped poly crystalline silicon. high - purity silicon. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics Which of the following oscillators are used for low frequency (LF) applications Both LC and RC Oscillators None RC oscillators LC oscillators Both LC and RC Oscillators None RC oscillators LC oscillators ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics Which of the following is the pentavalent material ? Gallium Neon Boron Arsenic Gallium Neon Boron Arsenic ANSWER DOWNLOAD EXAMIANS APP
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