Analog Electronics A forward potential of 10 V is applied to a silicon diode. A resistance of 1KΩ is also in series with the diode. The electric current is 9.3 mA. 10 mA. 0. 0.7 mA. 9.3 mA. 10 mA. 0. 0.7 mA. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics The silicon transistor are more widely used than germanium transistors because they have larger electric current carrying capacity. they have better ability to dissipate heat. they have smaller leakage current. they have smaller depletion layer. they have larger electric current carrying capacity. they have better ability to dissipate heat. they have smaller leakage current. they have smaller depletion layer. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics The magnitude of electric current ICBO is generally greater in silicon than in germanium transistor. depends largely upon emitter-base junction base potential. increases with the increase in temperature. depends largely upon the emitter doping. is generally greater in silicon than in germanium transistor. depends largely upon emitter-base junction base potential. increases with the increase in temperature. depends largely upon the emitter doping. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics Acceptors impurities are of ________ material Both A and B n-type p-type solid Both A and B n-type p-type solid ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics IGFET is a half - power device. 3 / 2 power - low device . linear device. square - law device. half - power device. 3 / 2 power - low device . linear device. square - law device. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics The current gain of a pnp transistor is the ratio of collector current to emitter current. the collector current divided by the emitter current. the negative of the npn current gain. near zero. the ratio of collector current to emitter current. the collector current divided by the emitter current. the negative of the npn current gain. near zero. ANSWER DOWNLOAD EXAMIANS APP
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