Which of the following statement is TRUE?

SSC JE Electrical 2018 with solution SET-1
Which of the following statement is TRUE?

The equivalent resistance in series combination is larger than the largest resistance in the combination

The equivalent resistance in series combination is equal to the largest resistance in the combination

The equivalent resistance in series combination is smaller than the largest resistance in the combination

The equivalent resistance in series combination is equal to the smallest resistance in the combination

The equivalent resistance in series combination is larger than the largest resistance in the combination

The equivalent resistance in series combination is equal to the largest resistance in the combination

The equivalent resistance in series combination is smaller than the largest resistance in the combination

The equivalent resistance in series combination is equal to the smallest resistance in the combination

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SSC JE Electrical 2018 with solution SET-1
The S.I unit of Electric energy is

Joule

Volts

Ampere

Watt

Joule

Volts

Ampere

Watt

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SSC JE Electrical 2018 with solution SET-1
In cables, the thickness of the layer of insulation on the conductor depends upon

Reactive Power

Voltage

Power Factor

Current carrying capacity

Reactive Power

Voltage

Power Factor

Current carrying capacity

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SSC JE Electrical 2018 with solution SET-1
In a P-N junction, the potential barrier is due to the charges on either side of the junction. These charges are

Majority carriers

Minority carriers

Both majority as well as minority carriers

Fixed donor and acceptor ions

Majority carriers

Minority carriers

Both majority as well as minority carriers

Fixed donor and acceptor ions

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Let us now consider a p-n junction in which one side a p-type semiconductor and the other side is an n-type semiconductor. The P side has a higher concentration of holes while the n-side has a higher concentration of free electrons. As a result, there is a tendency of the holes in the P-side to diffuse to the N-sides and the electrons in the N side to diffuse to the P-side.
Formation of depletion region: The region on both the n- and P sides which are close to the junction develops a low concentration of charge carriers. This happens because, as the electrons on the N-side diffuse towards the p-side, they recombine with the holes close to the junction.
The same thing occurs with the hole diffusing from the p-side to the n-side. Since a large number of recombinations occur close to the junction, the charge carrier densities close to the junction decrease drastically. This region close to the junction is called the depletion region or depletion layer.
Creation of junction potential: The electric neutrality of the semiconductor material is disturbed the region close to the junction because of the recombination which forms the depletion region. In the p-side of the depletion region, we have an accumulation of fixed negative charge ion since the atoms have acquired electrons from the n-region. Similarly, on the n-type side of the depletion region, there is an accumulation of fixed positive charge ions because the free electrons have moved to p-region.
This double layer of positive and negative charges produces an electric field which exerts a force on the electrons and holes against their diffusion. The potential difference corresponding to this electric field is called the potential barrier (or junction potential or barrier potential VB). This name implies that this potential difference acts as a barrier against the diffusion of electrons and holes from their majority side to the minority side. The magnitude of this potential barrier is about 0.3 V in case of germanium and about 0.7 V for silicon-based semiconductor diodes. The width of the depletion layer being of the order of one micron, the electric field that exists in the depletion layer is of the order of 105 Vm-1, which is indeed very high.

SSC JE Electrical 2018 with solution SET-1
The difference between the stator synchronous speed and rotor speed is called

Slip Speed

Slow Speed

Leading speed

Lagging speed

Slip Speed

Slow Speed

Leading speed

Lagging speed

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SSC JE Electrical 2018 with solution SET-1
The main drawback of resistance welding is

Difficult shapes and sections cannot be welded

High initial as well as High maintenance cost

Only similar metals can be welded

None of these

Difficult shapes and sections cannot be welded

High initial as well as High maintenance cost

Only similar metals can be welded

None of these

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SSC JE Electrical 2018 with solution SET-1

SSC JE Electrical 2018 with solution SET-1 Which of the following statement is TRUE?

SSC JE Electrical 2018 with solution SET-1 The S.I unit of Electric energy is

SSC JE Electrical 2018 with solution SET-1 In cables, the thickness of the layer of insulation on the conductor depends upon

SSC JE Electrical 2018 with solution SET-1 In a P-N junction, the potential barrier is due to the charges on either side of the junction. These charges are

SSC JE Electrical 2018 with solution SET-1 The difference between the stator synchronous speed and rotor speed is called

SSC JE Electrical 2018 with solution SET-1 The main drawback of resistance welding is

SSC JE Electrical 2018 with solution SET-1
Which of the following statement is TRUE?

SSC JE Electrical 2018 with solution SET-1
The S.I unit of Electric energy is

SSC JE Electrical 2018 with solution SET-1
In cables, the thickness of the layer of insulation on the conductor depends upon

SSC JE Electrical 2018 with solution SET-1
In a P-N junction, the potential barrier is due to the charges on either side of the junction. These charges are

SSC JE Electrical 2018 with solution SET-1
The difference between the stator synchronous speed and rotor speed is called

SSC JE Electrical 2018 with solution SET-1
The main drawback of resistance welding is