Analog Electronics Which of the following is trivalent impurity ? Boron Silicon Antimony None of these Boron Silicon Antimony None of these ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics The magnitude of electric current ICBO depends largely upon the emitter doping. is generally greater in silicon than in germanium transistor. depends largely upon emitter-base junction base potential. increases with the increase in temperature. depends largely upon the emitter doping. is generally greater in silicon than in germanium transistor. depends largely upon emitter-base junction base potential. increases with the increase in temperature. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics Energy gap of conductor is 1 - 2 eV. 8 eV. 0 eV. 5 - 8 eV. 1 - 2 eV. 8 eV. 0 eV. 5 - 8 eV. ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics Which process is used for adding impurity into a pure semiconductor material ? Insulating Doping None of these Conducting Insulating Doping None of these Conducting ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics Silicon and Germanium are ________ elements. pentavalant trivalant hexavalant tetravalant pentavalant trivalant hexavalant tetravalant ANSWER DOWNLOAD EXAMIANS APP
Analog Electronics When the pn junction is forward biased the sequence of events that take place are none of above. diffusion, injection and drift. injection, diffusion and recombination. diffusion, drift and recombination. none of above. diffusion, injection and drift. injection, diffusion and recombination. diffusion, drift and recombination. ANSWER DOWNLOAD EXAMIANS APP
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